
Allicdata Part #: | IXFK180N10-ND |
Manufacturer Part#: |
IXFK180N10 |
Price: | $ 14.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 100V 180A TO-264AA |
More Detail: | N-Channel 100V 180A (Tc) 560W (Tc) Through Hole TO... |
DataSheet: | ![]() |
Quantity: | 185 |
1 +: | $ 14.29000 |
10 +: | $ 13.86130 |
100 +: | $ 13.57550 |
1000 +: | $ 13.28970 |
10000 +: | $ 12.86100 |
Vgs(th) (Max) @ Id: | 4V @ 8mA |
Package / Case: | TO-264-3, TO-264AA |
Supplier Device Package: | TO-264AA (IXFK) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 560W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 10900pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 390nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 8 mOhm @ 90A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 180A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXFK180N10 is a depletion-mode Field Effect Transistor (FET), often simply referred to as a MOSFET (Metal Oxide Silicon Field Effect Transistor). It is a single FET, that is, it contains one channel in the body of the transistor. The IXFK180N10 has a voltage controlled input, meaning that the amount of current flowing through the transistor is determined by the voltage applied to the transistor’s gate.
The primary application of the IXFK180N10 is as a switch in a wide variety of circuits and systems. Due to the low voltage of the IXFK180N10 in comparison to other FETs, the IXFK180N10 is best used for low power systems, though it can still handle high power loads that are within its voltage range. It can be used to switch both AC and DC signals, making it an extremely versatile device.
The working principle of the IXFK180N10 can be explained in a few steps. When the voltage applied to the gate is below the threshold voltage (commonly referred to as Vth), the transistor is in its off state. In this state, the transistor blocks any current flowing through the channel, effectively acting as an “off switch”. When the voltage applied to the gate is above the threshold voltage, the transistor is in its on state. In this state, the channel conducts current, allowing it to act as an “on switch”. The amount of current conducted through the channel depends on the voltage applied to the gate, allowing it to be used either as a current limiter or as a control for a specific current level.
Additionally, the IXFK180N10 provides excellent linearity and low junction capacitance. This means that the device is capable of smoothly transitioning between on and off states, making it ideal for applications that require precise control over current. Its low junction capacitance also helps to reduce switching noise, which makes it an ideal choice for applications that require ultra-low noise characteristics.
Overall, the IXFK180N10 is an excellent choice for most switching applications. Its reliable performance and low cost make it an attractive option for many designers. Additionally, its versatility, linearity, and low junction capacitance make it an excellent choice for precise control applications. With its wide variety of applications and its ease of use, the IXFK180N10 is an excellent choice for any switching circuit.
The specific data is subject to PDF, and the above content is for reference
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