IXFK180N15P Allicdata Electronics
Allicdata Part #:

IXFK180N15P-ND

Manufacturer Part#:

IXFK180N15P

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 150V 180A TO-264
More Detail: N-Channel 150V 180A (Tc) 830W (Tc) Through Hole TO...
DataSheet: IXFK180N15P datasheetIXFK180N15P Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: HiPerFET™, PolarP2™
Packaging: Bulk 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 11 mOhm @ 90A, 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
FET Feature: --
Power Dissipation (Max): 830W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264AA (IXFK)
Package / Case: TO-264-3, TO-264AA
Description

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The IXFK180N15P is a vertical double-diffused enhancement-mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) of the common drain type. Initially developed by IXYS Corporation, the IXFK180N15P is designed to operate efficiently in extremely small-sized package and covers a wide range of power supplies, applications, and markets.

The IXFK180N15P combines a low on-state and gate input capacitance, high power handling capabilities, as well as low on-state resistance and gate threshold voltage, thus making it an ideal device for a number of applications. This transistor offers high pulse current capability, fast switching speeds, superior temperature characteristics, and extremely low threshold voltages.

It is suitable for a variety of power devices, such as voltage converters, motor controllers, and DC/DC converters, to name just a few. The IXFK180N15P is also ideal for industrial applications where low switching loss, long switching cycles, and high-side on-drain current capability is needed. This MOSFET is especially suitable for high-frequency switching at low drain voltages.

The IXFK180N15P is a N-channel MOSFET that provides a simple, inexpensive method for controlling electrical power in electronic circuits. It has two terminals, the Gate (G) and the Source (S), along with a third terminal called the Drain (D). When the Gate voltage is increased, it attracts mobile charge carriers into the channel of the MOSFET, thus creating an inversion layer which increases conduction between the Source and the Drain. By controlling the voltage applied to the Gate, the current flowing between the Source and the Drain can be varied.

The total Gate charge of the IXFK180N15P is extremely low, which helps keep control of switching losses while switching at high frequency. Also, the low on-state resistance makes this MOSFET suitable for applications where high power is needed, such as DC/DC converters, motor controllers and power supplies.

The IXFK180N15P features a low turn-on threshold voltage, Gate input capacitance and Gate charge, as well as high current rating, fast switching speed and superior temperature characteristics which make it ideal for applications requiring high current control, such as in power and wireless communications. Additionally, its high maximum drain voltage capability makes it suitable for a wide range of drive application.

In summary, the IXFK180N15P is an ideal solution for a wide range of power application such as voltage converters, motor controllers and DC/DC converters. It features a high input capacitance, low on-state resistance and gate threshold voltage, fast switching speed, superior temperature characteristics, and low turn-on threshold voltage.

The specific data is subject to PDF, and the above content is for reference

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