IXFK200N10P Allicdata Electronics
Allicdata Part #:

IXFK200N10P-ND

Manufacturer Part#:

IXFK200N10P

Price: $ 7.46
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 100V 200A TO-264
More Detail: N-Channel 100V 200A (Tc) 830W (Tc) Through Hole TO...
DataSheet: IXFK200N10P datasheetIXFK200N10P Datasheet/PDF
Quantity: 1000
1 +: $ 7.46000
10 +: $ 7.23620
100 +: $ 7.08700
1000 +: $ 6.93780
10000 +: $ 6.71400
Stock 1000Can Ship Immediately
$ 7.46
Specifications
Vgs(th) (Max) @ Id: 5V @ 8mA
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264AA (IXFK)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 830W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 235nC @ 10V
Series: HiPerFET™, PolarP2™
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk 
Description

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The IXFK200N10P is a type of field effect transistor (FET) from IXYS Corporation that is part of the family of IXFN FETs. IXFN FETs are designed to provide superior performance and unprecedented power saving for low voltage power management applications, such as for use in portable devices, DC to DC converters, and LED lighting. The IXFK200N10P is a single N-channel FET, and as such is a good choice for applications such as switching signals and/or controlling small loads.

The key features of the IXFK200N10P FET include its 10V VDS, 200mA drain current (IDS), 0.026Rds(on) at 4.5V, and high frequency switching capability. The FET also has a fast turn-on, with only 0.2nC gate charge, and can achieve a 10V VSD with a low RDS(on). This low RDS(on) allows the FET to provide superior power efficiency and control accuracy when used in applications such as DC to DC converters.

The working principle of the IXFK200N10P FET can be described in terms of how this type of FET works. When a voltage is applied to the gate of the FET, the electric field and current between the gate and the source will be increased, resulting in a greater impedance between the source and the drain. At this point, the FET is “on” and the current between the source and the drain is increased. When the voltage applied to the gate of the FET is reduced, the current between the source and the drain starts to decrease and the FET is now “off”. By controlling the voltage applied to the gate, the current between the source and the drain can be accurately regulated, making the IXFK200N10P FET an ideal device for controlling and switching signals and/or small loads.

The IXFK200N10P FET is well-suited to applications such as switching signals and/or controlling small loads in power management applications, as it provides superior power efficiency and control accuracy. In addition, the relatively low RDS(on) of the IXFK200N10P FET, combined with its fast switching speed, makes it an ideal choice for accurate DC to DC converter applications. The IXFK200N10P is a reliable and efficient device for power management needs, making it the perfect addition to any design project.

The specific data is subject to PDF, and the above content is for reference

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