IXFK20N80Q

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXFK20N80Q is a n-channel MOSFET which belongs to the IXYS family of power semiconductors. It is a highly integrated transistor and is used in many applications ranging from high-speed switching to signal and power conditioning. The IXFK20N80Q is uniquely suited to high-voltage and high-current applications with its excellent thermal stability, low gate capacitance, and low drain-source saturation voltage.

The main application areas of the IXFK20N80Q include motor control, power supplies, UPS, LCD/LED displays and lighting, power adapters, medical devices, and industrial automation. This MOSFET can operate in the range of -55°C to 175°C and has a drain-source breakdown voltage rating of 800V. The IXFK20N80Q provides maximum efficiency and robust power conversion. It is designed with advanced substrates and an optimized package geometry for superior thermal performance and improved on-state current density.

The IXFK20N80Q has a very low gate charge which reduces switching losses and increases system efficiency, as well as a low thermal resistance which provides better heat dissipation. It is ideal for high-performance power conversion and offers superior performance in high-power applications. With its simple construction and low power consumption, the IXFK20N80Q is an excellent choice for high-speed switching applications, such as DC-DC conversion circuits.

In terms of the IXFK20N80Q’s working principle, it is based on the FET technology, or Field Effect Transistor. This type of transistor works on the principle of an electric field created by a voltage applied between the gate and the source. A voltage applied to the gate allows current to flow between the drain and the source. This process is known as “pinch-off” and the amount of current flowing between the drain and source is dependent on the applied gate voltage. If a larger voltage is applied at the gate, the amount of current flowing between the source and the drain is increased. The opposite is true if a lower voltage is applied.

The IXFK20N80Q MOSFET is available in an TO-220AB package which is suited to a variety of applications. Its advanced technology provides low on-resistance with improved current density. High thermal stability and low gate voltage makes the IXFK20N80Q an ideal choice for high speed switching applications, as well as high power applications. With its compact design, the IXFK20N80Q is a reliable and cost-effective solution for a variety of applications. The specific data is subject to PDF, and the above content is for reference