IXFK24N100Q3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXFK24N100Q3 is a type of advanced insulated-gate field effect transistor (IGFET) or MOSFET that is commonly used in a variety of circuit applications today. The IXFK24N100Q3 is designed for high speed switching applications and is an excellent choice for Energy Efficient and High Efficiency (EE&HE) applications. It utilizes a special advanced process technology, which makes it better suited for applications requiring high-speed switching, low power consumption, and high reliability.

The key feature of the IXFK24N100Q3 is the special process technology used for its manufacture. This process provides a significant increase in power efficiency, reducing both device losses and overall system cost. It also offers remarkably low gate leakage, which improves its suitability for use in high speed and power critical applications such as motor controllers, frequency converters, and UPS systems. Additionally, it has a low “on” resistance (RDSon) which makes it a good choice for low-voltage, high-current designs.

In terms of design flexibility, the IXFK24N100Q3 provides ample choices. Its parameters are adjustable (Vgs, Ids, Rds, etc.) and its mounting can be made to fit different types of package formats such as TO-220, SOT-223, SOT-89, TO-12, and others. Its power dissipation can be up to 25 watts, and its drain-source breakdown voltage can reach up to 100 volts.

As far as the operation principle is concerned, the IXFK24N100Q3 is a metal-oxide-semiconductor field-effect transistor (MOSFET). A MOSFET is a three terminal semiconductor device utilising the physical principles of the field effect. The source, gate, and drain of the MOSFET are the three terminals. The base is a thin layer of metal oxide formed between the substrate and the drain contact, a situation which makes possible the switching of the electronic devices. The current flow between the source and the drain is proportional to the magnitude of the gate voltage.

The key component enabling the MOSFET to switch these devices is the gate oxide layer. This layer is an electrically insulating layer with a high dielectric constant, thus blocking the current from passing through the thin oxide layer. The positive voltage on the gate oxide layer, however, raises the Fermi level of the electrons within this layer, allowing them to pass through subsequently. The MOSFET then acts like a switch, allowing the conduction of current between source and drain when the gate voltage is applied.

To sum up, the IXFK24N100Q3 is an ideal MOSFET for energy efficiency and high efficiency applications. It features an advanced process technology to reduce device losses and system cost, along with a low gate leakage current, high speed switching capability, and adjustable parameters. Finally, it is also worth noting that the IXFK24N100Q3 operates on the principle of a MOSFET and is controlled by applying a positive voltage to the gate oxide layer of the device in order to switch the current flow between source and drain.

The specific data is subject to PDF, and the above content is for reference