Allicdata Part #: | IXFK24N80P-ND |
Manufacturer Part#: |
IXFK24N80P |
Price: | $ 6.14 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 800V 24A TO-264 |
More Detail: | N-Channel 800V 24A (Tc) 650W (Tc) Through Hole TO-... |
DataSheet: | IXFK24N80P Datasheet/PDF |
Quantity: | 1000 |
25 +: | $ 5.52510 |
Vgs(th) (Max) @ Id: | 5V @ 4mA |
Package / Case: | TO-264-3, TO-264AA |
Supplier Device Package: | TO-264AA (IXFK) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 650W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7200pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 105nC @ 10V |
Series: | HiPerFET™, PolarHT™ |
Rds On (Max) @ Id, Vgs: | 400 mOhm @ 12A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXFK24N80P is a type of high current, POWER MOSFET that is used in a wide range of electronic applications. It is a single high-current-capable MOSFET with a Vds (drain-source voltage) rating of 24 V and an Ids (drain-source current) rating of 80 A. It is designed for high-current switching and pulse applications, and is ideal for a variety of DC/DC converters, motion control systems, inverters, and other power supply systems.
The MOSFET is comprised of an N-channel MOSFET, which is a type of transistor that operates by controlling the flow of electrons between a source and a drain. The IXFK24N80P has an internal gate-source voltage voltage rating of -20V, which ensures that the MOSFET can be switched on quickly and is suitable for fast-switching applications. In addition, the device is rated for continuous operation at the full 80A output. This provides flexibility when designing circuits that require high-current outputs.
The IXFK24N80P incorporates advanced protection features, including an internal Avalanche energy rating of 200 mJ and a gate-source withstand voltage rating of +25V. These features provide excellent protection against electrical overstress and help ensure reliable operation in even the most demanding applications. The device also features a high temperature junction operating range of -55 to 175 degrees Celsius, making it suitable for use in a wide variety of temperatures.
The IXFK24N80P has a typical on-state resistance of 0.028 ohms and provides excellent switching stability and low gate-charge characteristics. The device also features low input capacitance and is rated for a maximum peak gate charge of 4.9 nano-coulombs, making it ideal for use in higher frequency switching applications. The device is available in an industry-standard, surface-mount power package.
The IXFK24N80P is a high current, POWER MOSFET that is perfect for a variety of applications. Its high temperature junction operating range, advanced protection features, low on-state resistance, and excellent switching characteristics make it ideal for use in a wide variety of DC/DC converter, motion control, and inverter applications. In addition, its easy-to-use power package makes it easy to design and assemble circuits for high-current switching applications.
The specific data is subject to PDF, and the above content is for reference
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