IXFK24N80P Allicdata Electronics
Allicdata Part #:

IXFK24N80P-ND

Manufacturer Part#:

IXFK24N80P

Price: $ 6.14
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 800V 24A TO-264
More Detail: N-Channel 800V 24A (Tc) 650W (Tc) Through Hole TO-...
DataSheet: IXFK24N80P datasheetIXFK24N80P Datasheet/PDF
Quantity: 1000
25 +: $ 5.52510
Stock 1000Can Ship Immediately
$ 6.14
Specifications
Vgs(th) (Max) @ Id: 5V @ 4mA
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264AA (IXFK)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 650W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Series: HiPerFET™, PolarHT™
Rds On (Max) @ Id, Vgs: 400 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFK24N80P is a type of high current, POWER MOSFET that is used in a wide range of electronic applications. It is a single high-current-capable MOSFET with a Vds (drain-source voltage) rating of 24 V and an Ids (drain-source current) rating of 80 A. It is designed for high-current switching and pulse applications, and is ideal for a variety of DC/DC converters, motion control systems, inverters, and other power supply systems.

The MOSFET is comprised of an N-channel MOSFET, which is a type of transistor that operates by controlling the flow of electrons between a source and a drain. The IXFK24N80P has an internal gate-source voltage voltage rating of -20V, which ensures that the MOSFET can be switched on quickly and is suitable for fast-switching applications. In addition, the device is rated for continuous operation at the full 80A output. This provides flexibility when designing circuits that require high-current outputs.

The IXFK24N80P incorporates advanced protection features, including an internal Avalanche energy rating of 200 mJ and a gate-source withstand voltage rating of +25V. These features provide excellent protection against electrical overstress and help ensure reliable operation in even the most demanding applications. The device also features a high temperature junction operating range of -55 to 175 degrees Celsius, making it suitable for use in a wide variety of temperatures.

The IXFK24N80P has a typical on-state resistance of 0.028 ohms and provides excellent switching stability and low gate-charge characteristics. The device also features low input capacitance and is rated for a maximum peak gate charge of 4.9 nano-coulombs, making it ideal for use in higher frequency switching applications. The device is available in an industry-standard, surface-mount power package.

The IXFK24N80P is a high current, POWER MOSFET that is perfect for a variety of applications. Its high temperature junction operating range, advanced protection features, low on-state resistance, and excellent switching characteristics make it ideal for use in a wide variety of DC/DC converter, motion control, and inverter applications. In addition, its easy-to-use power package makes it easy to design and assemble circuits for high-current switching applications.

The specific data is subject to PDF, and the above content is for reference

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