
Allicdata Part #: | IXFK30N100Q2-ND |
Manufacturer Part#: |
IXFK30N100Q2 |
Price: | $ 23.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1000V 30A TO-264 |
More Detail: | N-Channel 1000V 30A (Tc) 735W (Tc) Through Hole TO... |
DataSheet: | ![]() |
Quantity: | 1000 |
25 +: | $ 20.90120 |
Vgs(th) (Max) @ Id: | 5V @ 8mA |
Package / Case: | TO-264-3, TO-264AA |
Supplier Device Package: | TO-264AA (IXFK) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 735W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8200pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 186nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 400 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXFK30N100Q2 is a power MOSFET, a type of Field-Effect Transistor (FET) that is designed for applications requiring high current and low-voltage. It is a particularly attractive choice for power supply design because of its low on-resistance, low Drain-Source capacitance, and low speed gate source voltage. This element can be used for many different purposes, including providing power to integrated circuits and operating high-speed switching circuits.
A power MOSFET is a type of field-effect transistor that is designed to handle large amounts of current (as opposed to small signals). It has three terminals - the source, the drain, and the gate. The gate controls the flow of current between the source and the drain. When the gate voltage is high, current flows between the source and the drain; when the gate voltage is low, current cannot flow.
The IXFK30N100Q2 has a low Gate-Source Voltage (VGS), which means that it can be used in applications with lower voltage levels than traditional MOSFETs. Its low on-resistance and low Drain-Source capacitance make it a good choice for power supply design. Additionally, its low speed gate source voltage makes it suitable for high-speed switching circuits.
The IXFK30N100Q2 is well-suited for use in automotive and power supply applications. It has excellent switching characteristics and provides solid performance in high-current applications. In automotive applications, it can be used to provide power to headlights, tail lights, and other vehicle accessories. In power supply designs, it can be used to switch circuits on and off, as well as to regulate power to integrated circuits.
In summary, the IXFK30N100Q2 is a power MOSFET that is designed for applications that require both high current and low-voltage. Its low Gate-Source voltage, low on-resistance, and low Drain-Source capacitance make it an attractive choice for power supply and automotive applications. Additionally, its low speed gate source voltage makes it suitable for high-speed switching circuits, making it an excellent choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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