IXFK30N100Q2 Allicdata Electronics
Allicdata Part #:

IXFK30N100Q2-ND

Manufacturer Part#:

IXFK30N100Q2

Price: $ 23.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 1000V 30A TO-264
More Detail: N-Channel 1000V 30A (Tc) 735W (Tc) Through Hole TO...
DataSheet: IXFK30N100Q2 datasheetIXFK30N100Q2 Datasheet/PDF
Quantity: 1000
25 +: $ 20.90120
Stock 1000Can Ship Immediately
$ 23
Specifications
Vgs(th) (Max) @ Id: 5V @ 8mA
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264AA (IXFK)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 735W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 8200pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 400 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFK30N100Q2 is a power MOSFET, a type of Field-Effect Transistor (FET) that is designed for applications requiring high current and low-voltage. It is a particularly attractive choice for power supply design because of its low on-resistance, low Drain-Source capacitance, and low speed gate source voltage. This element can be used for many different purposes, including providing power to integrated circuits and operating high-speed switching circuits.

A power MOSFET is a type of field-effect transistor that is designed to handle large amounts of current (as opposed to small signals). It has three terminals - the source, the drain, and the gate. The gate controls the flow of current between the source and the drain. When the gate voltage is high, current flows between the source and the drain; when the gate voltage is low, current cannot flow.

The IXFK30N100Q2 has a low Gate-Source Voltage (VGS), which means that it can be used in applications with lower voltage levels than traditional MOSFETs. Its low on-resistance and low Drain-Source capacitance make it a good choice for power supply design. Additionally, its low speed gate source voltage makes it suitable for high-speed switching circuits.

The IXFK30N100Q2 is well-suited for use in automotive and power supply applications. It has excellent switching characteristics and provides solid performance in high-current applications. In automotive applications, it can be used to provide power to headlights, tail lights, and other vehicle accessories. In power supply designs, it can be used to switch circuits on and off, as well as to regulate power to integrated circuits.

In summary, the IXFK30N100Q2 is a power MOSFET that is designed for applications that require both high current and low-voltage. Its low Gate-Source voltage, low on-resistance, and low Drain-Source capacitance make it an attractive choice for power supply and automotive applications. Additionally, its low speed gate source voltage makes it suitable for high-speed switching circuits, making it an excellent choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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