IXFK360N10T Allicdata Electronics
Allicdata Part #:

IXFK360N10T-ND

Manufacturer Part#:

IXFK360N10T

Price: $ 7.06
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 100V 360A TO-264
More Detail: N-Channel 100V 360A (Tc) 1250W (Tc) Through Hole T...
DataSheet: IXFK360N10T datasheetIXFK360N10T Datasheet/PDF
Quantity: 1000
25 +: $ 6.35670
Stock 1000Can Ship Immediately
$ 7.06
Specifications
Vgs(th) (Max) @ Id: 5V @ 3mA
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264AA (IXFK)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1250W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 33000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 525nC @ 10V
Series: GigaMOS™ HiPerFET™
Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFK360N10T is a high-speed, high-current, low-on-resistance power MOSFET that is used in a variety of applications. It is a single N-channel MOSFET, which is a type of field-effect transistor (FET), and it is primarily used for power switching and many different types of amplifier circuits. It is a popular choice among engineers for its great speed and reliability. Let’s take a closer look at the IXFK360N10T’s application field and working principle.

The IXFK360N10T has primarily been used in motor control and load control applications, as well as in power supplies and power converters. These applications make use of its low on-resistance and its high current capabilities in order to provide efficient and reliable power switching. In addition, the IXFK360N10T is often used as a replacement for BJTs in amplifier circuits, since it offers superior switching performance and reduced power dissipation compared to its BJT counterparts.

The IXFK360N10T is also used in many linear applications, such as power switching, current sensing, and voltage regulating. This makes it an ideal choice for applications that require precise control of current and voltage. In addition, the IXFK360N10T’s high-speed switching and low on-resistance make it a good choice for high-frequency applications, such as those found in radio frequency (RF) and microwave circuits.

Now that we know what the IXFK360N10T is used for, let’s take a look at how it works. As a field-effect transistor, the IXFK360N10T works based on the principle of controlling current flow with an electric field. This is done by creating an electric field between a gate and a source electrode in order to control the flow of electrons between the source electrode and the drain electrode. This electric field is applied to the gate electrode, and this changes the resistance between the source and drain electrodes, thus allowing current to flow or not.

The IXFK360N10T also has a low threshold voltage, which means that it can be easily turned on by applying a small voltage to the gate. This feature makes it ideal for applications that require low and radio frequency switching, since the low threshold voltage allows for low-power operation. In addition, the IXFK360N10T has high breakdown and saturation voltages, which allows it to handle large voltages and currents.

The IXFK360N10T is a versatile and reliable FET that is used in a variety of applications. Its combination of low on-resistance, high-speed switching, low-power operation, and high voltage and current capabilities makes it a great choice for many types of power switching, amplifier, and linear applications. Whether it’s being used in motor control applications, power supplies, or high-frequency circuits, the IXFK360N10T has become an invaluable part of engineers’ toolkits.

The specific data is subject to PDF, and the above content is for reference

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