IXFK44N50Q Allicdata Electronics
Allicdata Part #:

IXFK44N50Q-ND

Manufacturer Part#:

IXFK44N50Q

Price: $ 12.59
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 500V 44A TO-264AA
More Detail: N-Channel 500V 44A (Tc) 500W (Tc) Through Hole TO-...
DataSheet: IXFK44N50Q datasheetIXFK44N50Q Datasheet/PDF
Quantity: 1000
25 +: $ 11.44630
Stock 1000Can Ship Immediately
$ 12.59
Specifications
Vgs(th) (Max) @ Id: 4V @ 4mA
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264AA (IXFK)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 500W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 120 mOhm @ 22A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFK44N50Q is an insulated-gate field effect transistor (IGFET) that can be found in many electronic applications. It typically consists of an N-channel metal-oxide semiconductor (MOS) field effect transistor. It is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) that utilizes a gate that is insulated from the rest of the device. It is designed to have excellent switching performance, as well as a rugged, reliable design. Because of its excellent capabilities, it is often used in a variety of applications such as power converters, inverters, motor drives, and more.

The IXFK44N50Q is usually rated to handle a continuous current of up to 44 amps (A) and a pulse current of up to 50 amps. It has a maximum power dissipation (or dissipated energy) of 88 watts (W) at 25 degrees Celsius (C). Its maximum drain-source breakdown voltage (also known as avalanche voltage) is 250 volts (V). Its maximum drain-source on-state resistance (RDS) is 0.4 ohms (Ω) and its maximum drain-to-body diode forward voltage at Tj (junction temperature) of 125 degrees Celsius (C) of 1.1 volts (V). Its gate charge (Qg) is measured in millicoulombs (mC) and its threshold voltage (Vth) is measured in volts (V).

The working principle of an IGFET like the IXFK44N50Q is based on a MOS capacitor. The MOS capacitor is made up of two layers: a conducting gate and an insulating layer of oxide. When a voltage is applied to the gate of the MOS capacitor, it causes electrons to be “drawn” towards the gate. This pushing of electrons causes an electric field between the gate and the drain, allowing the transistor to turn on and off. Because the gate of the MOS capacitor is insulated from the drain, the gate can be used to control the voltage (or current) between the source and the drain of the transistor.

Due to its excellent switching performance, the IXFK44N50Q can be used in many electronic applications. It can be used in DC to DC converters as well as in power supply circuits. It is also often used in motor control circuits, such as variable speed drive systems, speed controllers, and variable frequency drives. It is also used in solar power converters and battery protection circuits. In addition, the IXFK44N50Q can be used in various power converters and power electronics devices for the industrial and automotive markets.

The IXFK44N50Q is an excellent choice for many different power electronics applications. It is designed to have excellent switching performance and a rugged, reliable design. Its high current carrying ability and high-speed switching make it perfectly suited for many power electronics applications. With a wide range of current ratings, it can be used in a number of applications. The IXFK44N50Q can be used in DC-DC converters, motor control circuits, solar power converters, battery protection circuits, and other power electronics devices.

The specific data is subject to PDF, and the above content is for reference

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