IXFK48N50Q

Vgs(th) (Max) @ Id:	4V @ 4mA
Package / Case:	TO-264-3, TO-264AA
Supplier Device Package:	TO-264AA (IXFK)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	500W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	7000pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	190nC @ 10V
Series:	HiPerFET™
Rds On (Max) @ Id, Vgs:	100 mOhm @ 24A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	48A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IXFK48N50Q Application Field and Working Principle

The IXFK48N50Q is a depletion-mode metal oxide semiconductor field effect transistor (MOSFET). It is an n-channel device, meaning that the majority carriers in the channel are negative electrons, and the current in the device flows from source to drain when the gate is overdriven. The IXFK48N50Q is designed for applications that require circuit protection, high input impedance, and low on-state resistance. This makes it well suited for use as a switch in audio and power electronics. Additionally, it is especially useful in power management applications where low input currents are needed. The IXFK48N50Q has a wide range of applications, including power switches and power supply circuits. It can also be used as a level shifter, regulator, gate driver, or even an audio amplifier.The working principle of the IXFK48N50Q is based on the principle of induced charge. When an external electric field is applied to the gate of an MOSFET, the majority carriers in the channel near the gate become either electrons or holes. These majority carriers then induce an opposite charge on the gate terminal of the MOSFET, creating an electric field within the device.This electric field in turn causes a potential difference between the source and drain of the MOSFET, which determines the threshold voltage. When this threshold voltage is exceeded, the MOSFET is said to be in its on-state, and a current flows between the source and drain terminals.The IXFK48N50Q is an enhancement mode device, meaning that its on-state voltage is less than its threshold voltage. This helps to reduce power consumption, as the voltage across the device is kept low when it is off. Additionally, it ensures that the MOSFET has a linear transfer characteristic, which is ideal for applications such as audio or power electronics. Lastly, the IXFK48N50Q has a relatively low on-state resistance, which helps to reduce power dissipation and keep the device cool. This makes it suitable for use in high-power applications, where the power losses need to be minimized. In conclusion, the IXFK48N50Q is a depletion-mode MOSFET that is suitable for use in power switching and power supply circuits. Its low on-state resistance and linear transfer characteristic make it ideal for use in audio and power electronics applications. Additionally, its low threshold voltage ensures that it has a low power consumption when it is in its off-state.

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