IXFK64N50Q3 Allicdata Electronics
Allicdata Part #:

IXFK64N50Q3-ND

Manufacturer Part#:

IXFK64N50Q3

Price: $ 16.84
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 500V 64A TO-264
More Detail: N-Channel 500V 64A (Tc) 1000W (Tc) Through Hole TO...
DataSheet: IXFK64N50Q3 datasheetIXFK64N50Q3 Datasheet/PDF
Quantity: 45
1 +: $ 15.30270
25 +: $ 12.86710
100 +: $ 11.82380
Stock 45Can Ship Immediately
$ 16.84
Specifications
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264AA (IXFK)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1000W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6950pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 85 mOhm @ 32A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFK64N50Q3 is a power MOSFET designed to provide full range of adjustable voltage levels from medium voltage to high voltage applications. It is a single-gate enhancement type MOSFET (metal-oxide-semiconductor field-effect transistor) that is primarily used in switching applications. The IXFK64N50Q3 is optimized for low gate charge and high frequency switching performance. This MOSFET has a breakdown voltage of 64 V and a maximum drain-source voltage of 50 V. It is designed for use in a wide variety of low frequency switching applications such as server and storage equipment, communication equipment, and motor control systems.

Thanks to its wide array of features and low gate charge, the IXFK64N50Q3 MOSFET is ideal for high frequency switching applications such as AC inverter, dedicated DC/DC converter, SMPS, and motor speed control. It offers low gate resistance, low gate capacitance, low on-state resistance, and fast switching, delivering excellent performance. In addition, the IXFK64N50Q3 features temperature-compensated sensitive gate threshold voltage, ensuring stable switching operation over a wide temperature range from -40°C to +125°C.

The IXFK64N50Q3 MOSFET consists of a two terminal gate and three terminals for drain, source, and body. The gain of the transistor is determined by the ratio between the gate voltage and the drain-source voltage. Its working principle is based on the principles of electrostatics, wherein electrons present in the drain-source channel are attracted towards the gate by the electric field generated by the gate voltage. This results in the formation of an inversion channel between the source and drain. This causes the drain current to flow through the channel, and the MOSFET is then said to be in the conducting state.

To ensure efficient and reliable operation, the IXFK64N50Q3 must be driven with a gate driver IC that is capable of supplying sufficient current to drive the device. In some cases, a load switch and/or an output filter may also be needed. The device should be connected using a PCB trace that is designed for low inductance. The connection should also be tightly clamped to the PCB trace to ensure proper thermomechanical as well as electrical connection.

The IXFK64N50Q3 is an excellent choice for applications requiring low gate charge and high frequency switching performance. It is well suited for applications such as AC inverter, dedicated DC/DC converter, SMPS, and motor speed control. Its low gate resistance, low gate capacitance, low on-state resistance, and fast switching provide excellent performance and reliability. In addition, its temperature-compensated sensitive gate threshold voltage ensures stability over a wide temperature range. With proper connection, the IXFK64N50Q3 can be used in a variety of applications with excellent results.

The specific data is subject to PDF, and the above content is for reference

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