IXFK90N20Q Allicdata Electronics
Allicdata Part #:

IXFK90N20Q-ND

Manufacturer Part#:

IXFK90N20Q

Price: $ 13.87
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 200V 90A TO-264AA
More Detail: N-Channel 200V 90A (Tc) 500W (Tc) Through Hole TO-...
DataSheet: IXFK90N20Q datasheetIXFK90N20Q Datasheet/PDF
Quantity: 50
1 +: $ 12.60630
25 +: $ 10.60190
100 +: $ 9.74239
Stock 50Can Ship Immediately
$ 13.87
Specifications
Vgs(th) (Max) @ Id: 4V @ 4mA
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264AA (IXFK)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 500W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 22 mOhm @ 45A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFK90N20Q is a member of the IXTH family which is a family of high-performance, cost-effective, field-effect transistors (FETs). The IXTH family offers a wide variety of on-state and off-state characteristics tailored to meet specific market requirements. The IXFK90N20Q is a N-Channel, metal oxide semiconductor (MOSFET) FET with a single drain structure. This FET is rated at 20 amperes at 250Volts and its maximum junction temperature is 175°C.

The IXFK90N20Q has a variety of applications, including general purpose switching, battery management, voltage control and solid state relay applications. It is also used in high current applications such as inverters, variable speed drives, welding systems and power converters. The IXFK90N20Q also has excellent switching speed and efficient utilisation of power for higher frequency power conversion and motor control.

The working principle of the IXFK90N20Q is based on the MOSFET technology. It has an insulated gate which is made of a metal oxide and the gate is used to control the flow of current through the FET. The gate voltage is the controlling factor that regulates the current passing through the drain. When a positive gate voltage is applied, current passes through the drain. In contrast, when a negative gate voltage is applied to the FET, no current will flow through the drain.

The operation of the IXFK90N20Q is quite simple. By using the gate voltage, the flow of current through the drain can be controlled by simply varying the voltage. This makes the IXFK90N20Q ideal for a wide range of applications that require precise current control. It is also suitable for use in high-frequency power switching applications where high switching speed and efficiency are needed.

In conclusion, the IXFK90N20Q is an ideal choice for a variety of applications that require precise current control and efficient power utilisation. With its high performance and excellent switching speed, the IXFK90N20Q is a great choice for a wide range of applications. Additionally, its low cost makes it a very attractive choice for cost-sensitive applications.

The specific data is subject to PDF, and the above content is for reference

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