IXFK90N30 Allicdata Electronics
Allicdata Part #:

IXFK90N30-ND

Manufacturer Part#:

IXFK90N30

Price: $ 13.36
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 300V 90A TO-264
More Detail: N-Channel 300V 90A (Tc) 560W (Tc) Through Hole TO-...
DataSheet: IXFK90N30 datasheetIXFK90N30 Datasheet/PDF
Quantity: 1000
25 +: $ 12.14340
Stock 1000Can Ship Immediately
$ 13.36
Specifications
Vgs(th) (Max) @ Id: 4V @ 8mA
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264AA (IXFK)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 560W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 33 mOhm @ 45A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 300V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFK90N30 is a type of Field Effect Transistor (FET) known as an Insulated Gate Bipolar Transistor (IGBT). An IGBT combines the best of both bipolar and field-effect transistors, combining the high current and voltage handling abilities of a bipolar transistor with the low control power requirements of a field-effect transistor.

The IXFK90N30 is a single FET with a rated voltage of 600V and a current rating of 30A. It has a highly-reliable module structure and a low resistance process, giving it a low On-State Loss (RDS) and excellent dynamic characteristics. The device also features an integrated avalanche current suppression diode, which allows it to be used in applications requiring high dV/dt immunity and low turn-on losses. The device is particularly suitable for use in high-frequency switching applications.

The IXFK90N30 is designed to be used as a power semiconductor device for switching, phase control and other general voltage and current control applications. Commonly used in high power applications subjected to high current and voltage, the device is suitable for use in choppers, converters, rectifiers, inverters, motor control applications, and other switching applications.

The working principle of the IXFK90N30 is that once its gate is supplied with a small voltage, it switches a large voltage and current between its two main terminals (drain and source). This process is known as \'saturation\' as once the gate voltage exceeds that of the channel, the flow of electrons is through the channel and the channel is saturated with electrons. This \'saturation\' voltage can be tuned making it suitable for high-frequency switching processes such as those used in motor control.

The IXFK90N30 is an ideal device for high-current, high-voltage applications because of its low on-state loss, high-frequency switching capability, and its integrated avalanche current suppression diode. It\'s also suitable for use in a number of different types of applications, including switching, phase control, and general voltage and current control applications. It can operate reliably in harsh environments, making it suitable for use in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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