IXTN102N65X2 Allicdata Electronics
Allicdata Part #:

IXTN102N65X2-ND

Manufacturer Part#:

IXTN102N65X2

Price: $ 19.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 650V 76A X2 SOT-227
More Detail: N-Channel 650V 76A (Tc) 595AW (Tc) Chassis Mount S...
DataSheet: IXTN102N65X2 datasheetIXTN102N65X2 Datasheet/PDF
Quantity: 70
1 +: $ 17.27460
10 +: $ 15.97680
100 +: $ 13.64490
Stock 70Can Ship Immediately
$ 19
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 595AW (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 10900pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 30 mOhm @ 51A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTN102N65X2 is a novel type of Transistor - Field-Effect Transistor (FET) - Single, to be introduced in modern applications field. FETs are widely used, as they have a variety of advantages over more traditional electronic components, such as higher switching speed, low power consumption, and more. In the following article, we will discuss the application field and working principle of IXTN102N65X2.

Application Field of IXTN102N65X2

IXTN102N65X2, being a single FET, is suitable for various applications. Most commonly, these transistors operate as an electronic switch, allowing current to flow from one terminal to another when required. They are also used as linear amplifiers and switch-mode power supplies. Additionally, they are used in voltage controlled oscillators, filter circuits, and in the control of motors.

IXTN102N65X2 can be used in a range of digital and analog applications. In digital applications, they are used for logic gates, ripple counters, shift registers, and memory elements. In analog applications, they are used as impedance converters, sample and hold circuits, multiplexers and in frequency modulation.

Moreover, IXTN102N65X2 transistors are used in high-power applications, up to several kilowatts. Examples include the control of motor drives, solar cell inverters, and rectifying circuits. They are also used in industrial automation, such as robot control and machine vision.

Working Principle of IXTN102N65X2

IXTN102N65X2 is a single FET, and its structure follows typical FET principles. As with all transistors, it consists of three elements - source, gate, and drain. Current flows from source to drain when the gate is positively charged and the voltage between the source and drain is greater than the threshold voltage. In this state, the transistor is said to be in the “on” state.

When the gate is not positively charged or the voltage between the source and drain is less than the threshold voltage, current cannot flow through the transistor. In this state, the transistor is said to be in the “off” state. In this state, the IXTN102N65X2 can also operate as a linear amplifier, as the current is suppressed, thereby resulting in a gain in voltage or power.

The IXTN102N65X2 can provide high switching speeds and low power consumption due to its design. This is because the gate voltage controls the flow of electrons from the source to the drain, without depending on the voltage between the source and drain. As a result, very little power is needed to control the flow of current, and its switching time is much faster than more conventional transistors.

Conclusion

In summary, the IXTN102N65X2 is a single FET transistor, which can be used in a wide range of applications, from digital and analog to high-power ones. It provides high switching speeds and low power consumption due to its design, in which the gate voltage controls the flow of electrons from the source to the drain. The IXTN102N65X2 is expected to become a popular FET in the foreseeable future.

The specific data is subject to PDF, and the above content is for reference

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