IXTN40P50P

Vgs(th) (Max) @ Id:	4V @ 1mA
Package / Case:	SOT-227-4, miniBLOC
Supplier Device Package:	SOT-227B
Mounting Type:	Chassis Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	890W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	11500pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	205nC @ 10V
Series:	PolarP™
Rds On (Max) @ Id, Vgs:	230 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	40A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tube

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IXTN40P50P Application Field and Working Principle

IXTN40P50P is an insulated gate Field-Effect Transistor (FET). It is a common type of FET that comes in a single package, meaning there is only one active device in a single package. A single IXTN40P50P FET is a three-terminal semiconductor device that can be used for a variety of purposes in various types of circuits. The IXTN40P50P FET has been designed specifically to provide efficient switching and to use less power than other types of FETs while offering superior performance. The IXTN40P50P is a single N-channel enhancement type. This particular FET has an on-current of 40A and a maximum drain-source breakdown (RDS_On) of 0.5V. It also has high temperature capability and good feedback characteristics. The IXTN40P50P has a power dissipation rating of 600mW (at 25°C) and a drain-source breakdown voltage of 35V (at 25°C). It is a planar FET with a threshold voltage of 3V (at 25°C). IXTN40P50P application fields include power management, high-speed switching, load switching, motor control, amplifier input, motor start and stop, and power switching. It has been used in a variety of consumer electronics and other electronic devices because of its high switching speed, low on-resistance, and low power dissipation characteristics. The IXTN40P50P FET is based on the principle of MOSFET action. It has three terminals, the drain, gate, and source. The gate is the controlling terminal and when a voltage is applied to it, a depletion region is formed between the source and drain terminals. This depletion region becomes smaller when the voltage applied to the gate increases. The current that flows between the source and drain is called the drain current (ID) and it is proportional to the gate voltage. The IXTN40P50P has an insulation layer between the gate and the drain, which is what makes it an insulated gate FET. This insulation layer provides a higher level of current handling capability and faster switching speeds. The FET also has a higher breakdown voltage, lower gate leakage, and better output resistance. The IXTN40P50P FET is often used where low power consumption, high speed, and precise control are important factors. It is also used in applications where precise control of current is required such as in Audio frequency power supplies and High-Frequency switching applications. The IXTN40P50P can also be used in high-temperature applications such as in automotive use and harsh environments.In summary, the IXTN40P50P is an insulated gate Field-Effect Transistor (FET) with a single package. It is commonly used in power management, high-speed switching, load switching, motor control, amplifier input and other high-temperature applications. Its advantages include a high breakdown voltage, low on-resistance and low power dissipation. It is based on the principle of MOSFET action and has three terminals: the drain, gate, and source. The IXTN40P50P is ideal for applications requiring precise control of current and low power consumption.

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