IXTN30N100L

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IXTN30N100L is a family of vertical power MOSFETs offered by International Rectifier (IR). It combines low gate charge, low on-resistance, fast switching speed and Avalanche ruggedness and is ideal for use in a wide range of DC-DC converters and other general purpose power applications. This article details the IXTN30N100L application field, working principle and other features.

IXTN30N100L Application Field

The IXTN30N100L are mainly used in various DC-DC converter designs, including intermediate or bulk-capacitor converters, buck, SEPIC and flyback topologies. This is due to the combination of its superior switching performance with low on-resistance and fast avalanche dv/dt. In fact, the IXTN30N100L can reduce power losses by up to 30%, providing higher efficiency and energy savings.

The IXTN30N100L can also be used in applications such as automotive powertrain, industrial power, smart grid and renewable energy. In these types of applications, the IXTN30N100L helps maintain performance while providing low switching and conduction losses, as well as reliable operation in harsh thermal conditions.

IXTN30N100L Working Principle

An IXTN30N100L is essentially a voltage-controlled, three-terminal device constructed with a vertical power MOSFET. It works by having the control gate connected to an input voltage source, with two source and drain contacts that run from the source to the drain. When the input voltage is applied to the control gate, it produces an electric field which modulates the drains current, allowing for current to pass from source to drain. It is essentially a switch, it is used to control the amount of current flowing through the device.

The output performance of the IXTN30N100L is optimized for conduction loss related to the device’s low gate charge, low on-resistance, and fast switching speed. The IXTN30N100L also offers Avalanching robustness, providing a degree of protection which prevents device destruction in the event of an over-voltage or electrostatic discharge. It also provides EMI/RFI noise reduction, improved thermal performance and superior on-resistance.

IXTN30N100L Other Features

The IXTN30N100L is a low-cost, power MOSFET which can handle voltages up to 100V. It has an ultra-low gate charge which optimizes switching performance, improving its overall efficiency and reducing losses. The device offers two Zener diode protections, one for Vgss and one for Vds, which protect against over-voltage. In addition, it offers superior on-state thermal performance due to its low junction-to-case thermal resistance.

The IXTN30N100L also offers a wide range of safety features including ESD protection, EMI/RFI noise reduction, and Avalanche protection. Its RoHS-compliant construction and low-power feature set make it an ideal choice for various power applications. Additionally, the IXTN30N100L comes fully certified to EN 55022 Class B/A and JEDEC/AECQ-100 standards.

In conclusion, IXTN30N100L is an excellent choice for a wide range of DC-DC converters and other general purpose power applications. Its low gate charge, low on-resistance and fast switching speed mitigate the losses experienced in conduction-type losses. In addition, its superior RDS(on), Avalanche robustness and high pulse current capability make it an ideal choice for applications that require high power density, low power losses, and stringent safety and reliability standards.

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