IXTN21N100 Allicdata Electronics
Allicdata Part #:

IXTN21N100-ND

Manufacturer Part#:

IXTN21N100

Price: $ 22.65
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 1KV 21A SOT-227B
More Detail: N-Channel 1000V 21A (Tc) 520W (Tc) Chassis Mount S...
DataSheet: IXTN21N100 datasheetIXTN21N100 Datasheet/PDF
Quantity: 1000
10 +: $ 20.59470
Stock 1000Can Ship Immediately
$ 22.65
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 520W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
Series: MegaMOS™
Rds On (Max) @ Id, Vgs: 550 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IXTN21N100 is a high power general purpose N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) which is widely used in various applications. It is an extremely versatile and widely used transistor, making it ideal for many applications. It is a widely available, economical part that is ideal for amplifying, switching, or directly powering loads.

It is a single N-channel MOSFET, meaning it has only one channel connecting the source and drain. This is a common type of MOSFET due to the ease of use and cost savings for manufacturers. It offers superior performance in various applications such as protection circuits, amplifier stages, high-performance switching circuits and much more. The device has a low on-state resistance which is suitable for many high current applications.

The IXTN21N100 has a breakdown voltage of 25V, which is relatively low for its usage in high power applications. It can handle drain-source voltages of up to 100V and gate-source voltages up to ±20V. It has a power dissipation of 330W, a junction temperature of 175°C and a thermal resistance of 1.8K/W.

The IXTN21N100 can operate at drain voltages of 25V for continuous operation. The Gate is protected from voltage to ensure its safe operation. It also has over-voltage protection to ensure the device is not damaged from excessive voltages. In addition, it has a high frequency performance of 100MHz making it ideal for amplifying or switching fast signals.

The IXTN21N100 is also designed to be very reliable and robust such that it can withstand a wide range of temperatures and environmental factors. Its highly efficient design ensures that it works without much energy losses and it produces minimal heat. This makes it ideal for many power supply applications which require lower energy consumption and higher energy efficiency.

The IXTN21N100 is commonly used in various applications. It is used in protection circuits where its low-on state resistance, fast switching performance and robust design makes it an ideal choice. It is also used as amplifiers for providing high-voltage, high-current and high-performance amplifying capabilities. And it is used in power supply applications where its low-dissipation and low-temperature operation makes it an ideal choice.

On the whole, the IXTN21N100 is an excellent choice for many applications due to its versatility, robust design, and wide range of features. Its flexibility and wide range of features make it an ideal choice for many applications. Most importantly, its competitive pricing and wide availability make it an ideal part for many applications.

The specific data is subject to PDF, and the above content is for reference

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