IXTN120P20T Allicdata Electronics
Allicdata Part #:

IXTN120P20T-ND

Manufacturer Part#:

IXTN120P20T

Price: $ 29.05
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET P-CH 200V 106A SOT-227
More Detail: P-Channel 200V 106A (Tc) 830W (Tc) Chassis Mount S...
DataSheet: IXTN120P20T datasheetIXTN120P20T Datasheet/PDF
Quantity: 1000
10 +: $ 26.40900
Stock 1000Can Ship Immediately
$ 29.05
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 830W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 73000pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 740nC @ 10V
Series: TrenchP™
Rds On (Max) @ Id, Vgs: 30 mOhm @ 60A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTN120P20T is a field effect transistor (FET) designed to provide a high level of power performance in a wide range of applications. The IXTN120P20T is ideal for use in switched mode power supplies, DC to DC converters, and other high power switching circuits. It is one of the most advanced FETs available today and is used in many industries.

The IXTN120P20T is an N-channel MOSFET, meaning it\'s capable of both controlling current flow and blocking voltage from passing. It uses a metal oxide semiconductor field effect (MOSFET) technology, which allows current and voltage control and stability even at high frequencies. The device is rated for drain to source voltage up to 200V and current up to 25A. It also has a low thermal resistance in order to minimize heat dissipation in applications.

The MOSFET technology used in the IXTN120P20T makes it well-suited for use in high-frequency switching applications. Using its voltage and current control capabilities, this device can be used to build circuits with a high degree of accuracy and stability. These circuits can be used to improve power efficiency, reduce noise and other switching losses, and provide better protection for sensitive components.

The primary working principle of the IXTN120P20T is the ability to control current flow and voltage thresholds. In simplest terms, the voltage between the drain and source is controlled, known as VDS. An applied gate voltage controls the current flow of VDS while the device is off, allowing for more precise control. When the device is switched on, the VDS is increased, allowing electrons to flow from the source to the drain. This process is also known as channel enhancement.

The IXTN120P20T is also capable of operating with reduced losses at higher frequencies. It has low capacitive leakage, which is a benefit when used in high-frequency applications. The low capacitance also reduces switching losses and improves power efficiency. The device also has a lower input and output capacitance, which allows it to respond faster in high-frequency applications.

In terms of applications, the IXTN120P20T transistor is most commonly used in switched mode power supplies, DC to DC converters, motor control circuits, servo motor systems, and other power switching circuits. It is also ideal for use in high-power switching applications where stability and accuracy are of utmost importance. The IXTN120P20T is one of the most advanced FETs available and is used in many industries.

The specific data is subject to PDF, and the above content is for reference

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