| Allicdata Part #: | IXTN62N50L-ND |
| Manufacturer Part#: |
IXTN62N50L |
| Price: | $ 35.27 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 500V 62A SOT-227 |
| More Detail: | N-Channel 500V 62A (Tc) 800W (Tc) Chassis Mount SO... |
| DataSheet: |  IXTN62N50L Datasheet/PDF |
| Quantity: | 1000 |
| 10 +: | $ 32.06510 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | SOT-227-4, miniBLOC |
| Supplier Device Package: | SOT-227B |
| Mounting Type: | Chassis Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 800W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 11500pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 550nC @ 20V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 100 mOhm @ 500mA, 20V |
| Drive Voltage (Max Rds On, Min Rds On): | 20V |
| Current - Continuous Drain (Id) @ 25°C: | 62A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTN62N50L is a semiconductor device manufactured by IXYS power MOSFETs. It is a specific type of field-effect transistor (FET) called a metal-oxide-semiconductor field-effect transistor (MOSFET). The IXTN62N50L is a single MOSFET, meaning that it is composed of a single P-channel in its construction.
Because the IXTN62N50L is a MOSFET, it works like a FET but has superior properties than standard field-effect transistors. A FET works by controlling the flow of carriers, such as electrons or holes, across a conductive gate or electrode. But the construction of a MOSFET allows it to control the flow of carriers using a much thinner gate dielectric, which significantly reduces the amount of power needed to switch the gate region from one state to another.
The IXTN62N50L is a P-channel MOSFET, so it can be used to control the flow of either electrons or holes. Consequently, the IXTN62N50L is suited for a variety of applications including analog and digital circuits, motor controllers, audio amplification and power switching.
The IXTN62N50L has a variety of features that make it ideal for many of these applications. It has a breakdown voltage of 400 V, a maximum drain-source voltage of 600 V and a maximum drain current of 8.5 A. This makes it well-suited for high power applications. Additionally, its maximum gate threshold voltage of 2.0 V, its on-resistance of 0.057 Ohm and its fast switching times make it ideal for high-frequency and digital applications.
The IXTN62N50L is a reliable and robust power MOSFET that is well-suited for many types of applications. It has a wide range of features that make it capable of handling many types of power and transfer requirements. Its fast switching times and low on-resistance allow it to switch quickly and efficiently, making it perfect for high-frequency and digital applications. Additionally, its high breakdown voltage and maximum drain current make it well-suited for high-power applications as well.
The specific data is subject to PDF, and the above content is for reference
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