| Allicdata Part #: | IXTN110N20L2-ND |
| Manufacturer Part#: |
IXTN110N20L2 |
| Price: | $ 27.57 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 200V 100A SOT-227 |
| More Detail: | N-Channel 200V 100A (Tc) 735W (Tc) Chassis Mount S... |
| DataSheet: |  IXTN110N20L2 Datasheet/PDF |
| Quantity: | 1000 |
| 10 +: | $ 25.06390 |
Specifications
| Vgs(th) (Max) @ Id: | 4.5V @ 3mA |
| Package / Case: | SOT-227-4, miniBLOC |
| Supplier Device Package: | SOT-227B |
| Mounting Type: | Chassis Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 735W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 23000pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 500nC @ 10V |
| Series: | Linear L2™ |
| Rds On (Max) @ Id, Vgs: | 24 mOhm @ 55A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Description
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The IXTN110N20L2 is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistors) able to handle high power at relatively low drain-source on-state voltages. It is one of the most popular MOSFETS on the market due to its wide range of applications and wide-ranging specifications. Among these is a maximum drain-source breakdown voltage of 200 Volts, drain current up to 28.5 Amps and an RDS(ON) of just 11.5 milliohms. It is also popular due to its fast switching time, of just 9 nanoseconds and its low gate charge, of just 62 nC.The IXTN110N20L2 is a Field Effect Transistor (FET) specifically designed for use in power management and switching applications. As such it is commonly found in automotive, audio and other high-power systems. Its low series resistance and low on-state voltage drop make it ideal for use in high-efficiency power delivery systems. It can be used in a variety of configurations to suit different requirements.In Complementary Metal Oxide Semiconductor (CMOS) inverters, the IXTN110N20L2 is a popular replacement for the traditional NPN transistors. In these devices it is used as a switch for the output driver, with the source connected to the power supply, the gate connected to the control signal, and the drain connected to ground. By applying a voltage to the gate, the FET is able to switch between on and off states. This makes the FET ideal for high power, high efficiency applications.The IXTN110N20L2 also has several advantages in the field of switching power supplies. Due to its low on-resistance, it is able to deliver high currents at relatively low switching frequencies. This means that it is able to reduce power losses and switch times, effectively increasing the efficiency of the power supply. Additionally it is able to handle high current outputs, making it ideal for use in power supplies intended to power high-current loads.In addition to its use in power management systems, the IXTN110N20L2 is also commonly used in power switching applications, such as motor controls, LED drivers and DC-DC converters. The low on-state voltage drop and low gate charge make it ideal for controlling motors, while the low on-resistance enables it to handle higher current outputs. In LED drivers, the FETs ability to switch quickly allows it to control individual LEDs with very little latency. In DC-DC converters, the FETs low gate charge enables it to deliver high power to the load with a minimum of switching losses.The IXTN110N20L2s working principle is based on a MOSFETs basic operation. The drain-source junction is formed by two separate conductive channels; one for electrons (N-channel) and one for holes (P-channel). When the gate voltage is low, the N-channel will be blocked, while the P-channel will be open, allowing current to flow between the drain and source. When the gate voltage is increased, the N-channel is opened and electrons can flow freely, while the P-channel is blocked, resulting in the MOSFET being ‘on’.In summary, the IXTN110N20L2 is a popular MOSFET designed specifically for high power applications in fields such as automotive and audio engineering. Its low series resistance and low on-state voltage drop make it ideal for use in power delivery systems, while its low gate charge makes it suitable for use in switching applications. Its working principle is based on MOSFETs basic operation, with the drain-source junction being formed by two separate channels depending on the gate voltage.
The specific data is subject to PDF, and the above content is for reference
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