IXTN22N100L

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXTN22N100L is an N-Channel enhancement mode high voltage MOSFET from IXYS Corporation, one of the world’s leading manufacturers of electronics components. This MOSFET is specifically designed for use in high voltage switching applications, boasting an impressive drain to source voltage rating of 1200 VDC. As with all MOSFETs, the IXTN22N100L is a member of the family of field-effect transistors (FETs), specifically a type of insulated gate bipolar transistor (IGBT), although its physical structure is also known as a metal oxide semiconductor FET (MOSFET).

The IXTN22N100L is a single MOSFET, meaning that it contains one n-channel FET, with a minimum drain to source-on resistance of 2.2 Ohms. This allows it to conduct high levels of current with minimal losses due to the device’s inherent low internal resistance (RDS(on)). The high voltage MOSFET is also capable of withstanding high levels of reverse bias voltage up to 1024V, a big advantage for high voltage design as it means that damage due to overvoltage or incorrect wiring will be minimized.

The IXTN22N100L has a variety of applications, making it an ideal component choice for designs that require high-voltage switching. Its low RDS(on) allows it to handle currents in excess of 200A, making it an ideal choice for applications such as DC-DC converters, AC-DC converters, DC-AC inverters, switches, and other power electronics. Its low cost also makes it ideal for consumer applications such as television and radio power supplies.

The working principle of the IXTN22N100L MOSFET is relatively simple. A transistor consists of three terminals – the gate, the source, and the drain. Voltage applied to the gate will determine the current flowing from the source to the drain, with the higher the voltage, the greater the current. This is achieved by allowing electrons to flow through a conducting channel between the source and the drain when a positive voltage is applied to the gate.

In summary, the IXTN22N100L is an N-Channel enhancement mode high voltage MOSFET from IXYS Corporation, designed specifically for use in high voltage switching applications. The MOSFET is capable of withstanding high levels of reverse bias voltage, and able to conduct high levels of current with minimal losses due to its low internal resistance. Its low cost also makes it ideal for use in consumer electronics. The MOSFET works by allowing electrons to flow through a conducting channel between the source and the drain when a positive voltage is applied to the gate.

The specific data is subject to PDF, and the above content is for reference