Allicdata Part #: | IXTN200N10T-ND |
Manufacturer Part#: |
IXTN200N10T |
Price: | $ 19.61 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 100V 200A SOT-227 |
More Detail: | N-Channel 100V 200A (Tc) 550W (Tc) Chassis Mount S... |
DataSheet: | IXTN200N10T Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 17.82650 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | SOT-227B |
Mounting Type: | Chassis Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 550W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 152nC @ 10V |
Series: | TrenchMV™ |
Rds On (Max) @ Id, Vgs: | 5.5 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 200A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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Integrated External Transistor (IXTN) is a type of transistor device that utilizes integrated circuit technology to increase the transistor\'s speed, power, and stability in a single integrated package. This type of device combines the best features of both audio and digital transistors, and is commonly used to control audio signals and digital signal processing. With this feature, it has become increasingly popular in many applications including signal processing, signal analysis, signal modulation, and even communication systems.
The IXTN200N10T is an integrated external transistor that is designed for high-speed, low-power operation. It is specifically designed for high quality signal applications, such as audio and video applications, where quick and reliable signal transmission is required. It is also suitable for portable applications including audio players, mobile phones, and portable media players. This device is available in a wide variety of packages, including surface-mount, through-hole, and solderable versions.
The working principle of the IXTN200N10T is based on the technology of FETs (field effect transistors). FETs (field effect transistors) are transistor-like devices that allow current to be controlled by the application of an electrical field. FETs can be used to perform simple switching functions, such as turning on or off a signal, or to perform more complex operations such as controlling the gain of an amplifier. When a voltage is applied to the gate of the transistor, the charge carriers are either positive or negative, which in turn control the current flow.
The IXTN200N10T is composed of two components, a P-Channel (PMOS) and an N-Channel (NMOS). The P-Channel is the active part of the device, and controls the flow of current when a voltage is applied to the gate. The N-Channel is the passive part, and only controls the signal. Together the two components form a transistor-like structure and are usually referred to as a "dual-gate" transistor device.
The IXTN200N10T is designed to provide excellent signal integrity while maintaining low current consumption. It features an exceptionally wide range of operation with high gain, high speed, and excellent linearity in signal processing and signal modulation. The device itself is unaffected by temperature or other environmental changes, making it very reliable and suitable for various applications.
The IXTN200N10T is one of the most reliable and advanced transistor devices available, and its performance characteristics make it suitable for a wide range of signal processing and signal modulating applications. It is ideal for use in audio and video applications, as well as communication systems where reliable and fast signal transmission is required. In addition to these applications, it can also be used in other applications such as power management and automotive systems.
The specific data is subject to PDF, and the above content is for reference
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