IXTN170P10P

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IXTN170P10P is one of the single isolated gate MOSFETs manufactured by IXYS Corporation. IXTN170P10P has a drain current rating of 10A or 130W at 25 °C (in a TO-264AA package) and 12A or 134W at 175°C (in a TO-220FPA package). The device is one method designed to control the voltage, power flow, and general current regulation. This paper will cover the general characteristics and operations of IXTN170P10P, potential application fields, and a brief overview of the device’s working principle.

General Characteristics

IXTN170P10P is a 180V, 10A MOSFET featuring an Enhanced Avalanche Ruggedness (EAR) power MOSFET. It features a relatively low on-state resistance at only 3.2 milliohms and a relatively high transconductance of 351S at 4.5A drain current. It is an N-Channel device in a to-220 form factor and is capable of withstanding avalanche energy of up to 400mJ. The device has a total gate charge of 18nC and a critical diode reverse recovery time of 3.2µs at 4.5A. Its gate-source threshold voltage is -3V, making it suitable for low-voltage applications.

Applications

Due to the low drain-source on-resistance and relatively high transconductance of IXTN170P10P, it can be used in various switching applications such as AC/DC converters, DC/DC converters, and motor control. Its low threshold voltage makes it ideal for low-voltage operation and its low gate charge makes it capable of switching high-frequency signals. It can also be used in LED dimming applications. Due to its good thermal stability, IXTN170P10P is suitable for a variety of applications requiring reliable operation over a wide range of temperatures.

Working Principle

The IXTN170P10P utilizes a basic MOSFET operating principle, which works on the basis of three-layer metallic oxide semiconductor (MOS) cells. The drain and source are the two electrodes of the device, while the gate is the control electrode. The oxide layer acts as an electric field that separates the gate from the drain and source electrodes. A voltage applied to the gate control electrode attracts electric carriers through the oxide layer, by creating a potential barrier. This allows the current to flow from the source to the drain when the gate voltage is high enough to create the potential barrier to enable the current flow.

On the other hand, when the gate voltage doesn’t meet the given threshold voltage, the potential barrier doesn’t occur, thus preventing the electric carriers from passing. The ability of the gate voltage to control the current flow allows for the IXTN170P10P to be used for switching applications. For example, when the gate voltage is high enough, the current is allowed to flow. When the gate voltage is reduced, the current flow is also reduced.

Conclusion

IXTN170P10P is an Enhanced Avalanche Ruggedness (EAR) power MOSFET which is suitable for a variety of switching applications, due to its low on-state resistance, relatively high transconductance, low gate charge and low threshold voltage. Its low gate charge makes it suitable for high-frequency operation and its good thermal stability makes it suitable for applications requiring reliable operation over a wide range of temperatures. IXTN170P10P is manufactured by IXYS Corporation and is available in both TO-264AA and TO-220FPA packages.

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