Allicdata Part #: | IXTN90P20P-ND |
Manufacturer Part#: |
IXTN90P20P |
Price: | $ 16.67 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET P-CH 200V 90A SOT227 |
More Detail: | P-Channel 200V 90A (Tc) 890W (Tc) Chassis Mount SO... |
DataSheet: | IXTN90P20P Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 15.15150 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | SOT-227B |
Mounting Type: | Chassis Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 890W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 12000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 205nC @ 10V |
Series: | PolarP™ |
Rds On (Max) @ Id, Vgs: | 44 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTN90P20P is a high-voltage vertical N-channel power MOSFET. It can be used in applications including motor drives, SMPS, deflection circuits, and high voltage inverters, among others. It has an extended temperature range of up to + 175 °C and a maximum voltage rating of 900V. This makes it suitable for applications in extreme environments. The IXTN90P20P has a low gate charge which means that less energy is required for switching, making it more efficient than other MOSFETs with higher resistance.
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of Field Effect Transistor that can be thought of as a semiconductor-based switch. When the transistor is conducting, it passes current from source to drain; when the transistor is not conducting, it has a very high resistance between source and drain. This is due to its structure, which consists of a metal oxide sandwiched between two doped semiconductor layers.
The IXTN90P20P has a gate-source voltage range of -10V to +20V which makes it suitable for a wide range of applications. The primary role of the gate is to control the flow of current between source and drain. This is done by changing the voltage applied to the gate. Applying a positive voltage to the gate will open the MOSFET and allow current to flow from the source to the drain. Applying a negative voltage to the gate will close the MOSFET and prevent current from flowing.
The IXTN90P20P also has a maximum drain current rating of 180A and a drain-source saturation voltage of 1.8V. This ensures that the MOSFET will not overload when operating at high currents. Additionally, the IXTN90P20P has ESD protection which means that it can be used in environments where static electricity is a concern.
The IXTN90P20P is an ideal choice for high voltage applications that require a reliable and efficient MOSFET. Its extended temperature range and high voltage rating make it suitable for a wide range of applications. Additionally, its low gate charge and ESD protection make it an excellent choice for use in harsh environments. Overall, the IXTN90P20P is an excellent choice for power MOSFET applications.
The specific data is subject to PDF, and the above content is for reference
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