Allicdata Part #: | IXTU01N100-ND |
Manufacturer Part#: |
IXTU01N100 |
Price: | $ 1.49 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1KV .1A I-PAK |
More Detail: | N-Channel 1000V 100mA (Tc) 25W (Tc) Through Hole T... |
DataSheet: | IXTU01N100 Datasheet/PDF |
Quantity: | 1000 |
70 +: | $ 1.34037 |
Vgs(th) (Max) @ Id: | 4.5V @ 25µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | TO-251 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 54pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 6.9nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 80 Ohm @ 100mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 100mA (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTU01N100 is one of the many single-gate field-effect transistors (FETs) used in various applications. This type of FET is often used in digital and analog circuits where high power switching and/or low static power consumption is required. A FET is a three-terminal semiconductor device that utilizes the voltage applied to the gate terminal to control the current flow between the source and drain terminals.
The IXTU01N100 has a drain-to-source breakdown voltage (BVDSS) rating of 100V and a continuous drain current (ID) rating of 3A. It also has a drain source on-resistance (RDS(on)) of 15Ω at VGS(off) of 4.5V and a maximum gate-source voltage (VGS) of +/-25V. The FET also features fast switching times and low gate charge, making it well-suited for use in applications such as power management and high frequency switching.
The basic working principle of the IXTU01N100 is relatively simple. When the gate terminal is exposed to a positive voltage, the FET is considered to be “ON” and allows a current to flow from the source to the drain. When the gate voltage is at a negative level, the FET is considered to be “OFF”, essentially blocking any current from flowing. Thus, by controlling the gate voltage, the amount of current flowing through the FET can be effectively controlled.
Some of the common applications of the IXTU01N100 FET include motor control, audio amplifiers, switching power supplies, automotive systems, and light dimming. In motor control applications, the FET can be used to control the speed and direction of the motor. In audio amplifiers, a combination of FETs can be used to produce a high-power, low-distortion voltage amplifier, as well as to build a linear amplifier. In switching power supplies, such as those found in computers and DVD players, FETs are typically used to provide power switching and control.
In automotive systems, FETs can be used for a variety of tasks such as fuel injection, transmission control, and various other motor-control tasks. In light dimming applications, FETs are commonly used in LED light dimmer circuits, allowing the LED brightness to be controlled using a simple voltage source. In addition, the IXTU01N100 can also be used in a variety of other applications where a high-power MOSFET with low static power consumption is desired, such as in high-performance audio amplifiers, DC-DC converters, voltage regulators, and other similar applications.
The IXTU01N100 is an excellent example of a single-gate FET, capable of providing high-power switching and low static power consumption when used for various application purposes. With its wide range of applications, the FET is an extremely useful device for engineers and technicians involved in the design and implementation of digital, analog, and high-frequency electronics.
The specific data is subject to PDF, and the above content is for reference
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