IXTU50N085T

Series:	--
Packaging:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	85V
Current - Continuous Drain (Id) @ 25°C:	50A (Tc)
Rds On (Max) @ Id, Vgs:	--
Vgs(th) (Max) @ Id:	4V @ 25µA
FET Feature:	--
Power Dissipation (Max):	--
Operating Temperature:	--
Mounting Type:	Through Hole
Supplier Device Package:	TO-251
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA

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The IXTU50N085T is a single gate field-effect transistor (FET) that operates in enhancement mode and is specifically designed for use in high speed switching applications. It is based on a planar structure optimized for low-power use in mobile applications. The IXTU50N085T features an on-resistance of 26.3 mΩ and a maximum continuous drain current of 1.5 A, making it well-suited for use in consumer electronics. Additionally, it has a maximum power dissipation of 0.6 W, making it a good choice for applications requiring low-power operation.The IXTU50N085T is based on Silicon-on-Insulator (SOI) technology, which allows for superior electrical performance compared to conventional planar technologies. This technology minimizes the resistance between the source and drain due to a thin silicide layer, which helps reduce gate capacitance. Additionally, this feature helps reduce power loss and increases speed. Another advantage of the SOI technology is its low thermal resistance, which can help reduce overall temperature of the device.The IXTU50N085T’s working principle is based on the concept of an electric field-effect (EFE). This effect is created when voltage is applied to the gate of the transistor, creating an electric field which influences the current flow between the source and drain. The EFE principle used in the IXTU50N085T enables strong current control. The gate voltage determines the turn-on and off threshold of the transistor, and this can then be adjusted to desired levels with the use of external circuitry.Due to their high performance, the IXTU50N085T are most commonly used in power management circuits, such as DC-DC converters, switchedmode power supplies, and battery management systems. They can also be used in a wide variety of applications, including communication and computing applications, such as wireless and wired communication transceivers, analog to digital converters, and microcontrollers. The IXTU50N085T is also used in automotive electronics, for powering dashboard systems and lighting, as well as embedded systems like medical devices.The IXTU50N085T is an ideal device for low-power applications, thanks to its high speed switching and low on-resistance, which leads to lower power dissipation. The SOI technology also allows for fast switching speeds, with a maximum frequency of up to 1.0 GHz. Additionally, the low static power consumption of the IXTU50N085T can help reduce overall power consumption in applications where high speed switching is required.In summary, the IXTU50N085T is a single gate FET specifically designed for use in high speed switching applications. It is based on an SOI technology, which helps reduce gate capacitance and power loss, resulting in a faster switching speed and lower static power consumption. It has an on-resistance of 26.3 mΩ and a maximum continuous drain current of 1.5 A, making it well-suited for use in consumer electronics, power management circuits, and embedded systems.

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