Allicdata Part #: | IXTU05N120-ND |
Manufacturer Part#: |
IXTU05N120 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1200V 0.5A TO-251 |
More Detail: | N-Channel 1200V 500mA (Tc) Through Hole TO-251 |
DataSheet: | IXTU05N120 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 1200V |
Current - Continuous Drain (Id) @ 25°C: | 500mA (Tc) |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-251 |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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The IXTU05N120 is a type of single, N-channel MOSFET (metal oxide-silicon field-effect transistor) which is used in a wide range of applications. It is an ideal choice for applications where fast switching speeds, low on-state resistance and low capacitance are necessary. The device can be used in both automatic and manual switching applications, and its low input capacitance ensures high switching speeds with minimal power consumption.
TheIXTU05N120 is designed as a power switch, allowing it to control higher voltages and currents than other conventional MOSFETs. The device also has built in protection against over-voltage, current and thermal overloads, as well as a built in diode to protect against reverse biasing. All of these features make the IXTU05N120 an especially attractive device for a variety of applications such as motor drives, solar inverters, uninterruptable power supplies (UPS) and DC-DC converters.
The IXTU05N120 is designed to be a general purpose MOSFET, which means that it can be used in both switching and linear applications. The device has a maximum drain current of 2 Amps, a drain-source on-state resistance of 0.0032Ω and a gate charge of 1.7μC. This makes it well suited for a number of different power applications, including power amplification and regulation.
The basic operating principle of the IXTU05N120 is similar to that of the other types of MOSFETs. That is, the device provides a field-effect channel between the source and drain terminals, where the current flow is modulated by the applied gate voltage. In other words, by adjusting the gate voltage, the current flow can be increased, decreased or kept at a constant level. The device also offers excellent noise rejection characteristics, making it ideal for use in high-noise environments.
The IXTU05N120 is a very versatile MOSFET, with a wide range of potential applications. It can be used in linear and switching applications, and its built in protection and low on-state resistance make it especially suitable for efficient power control. The device can also withstand high levels of noise, making it well suited for use in loud or turbulent environments. The IXTU05N120 is an ideal choice for a variety of different power applications, from motor drives to solar inverters.
The specific data is subject to PDF, and the above content is for reference
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