| Allicdata Part #: | IXTU01N80-ND |
| Manufacturer Part#: |
IXTU01N80 |
| Price: | $ 1.33 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 800V 0.1A TO-251 |
| More Detail: | N-Channel 800V 100mA (Tc) 25W (Tc) Through Hole TO... |
| DataSheet: |  IXTU01N80 Datasheet/PDF |
| Quantity: | 1000 |
| 50 +: | $ 1.19549 |
| Vgs(th) (Max) @ Id: | 4.5V @ 25µA |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package: | TO-251 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 25W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 60pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 8nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 50 Ohm @ 100mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 100mA (Tc) |
| Drain to Source Voltage (Vdss): | 800V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTU01N80 is a device in the family of metal-oxide-semiconductor field-effect transistors (MOSFETs). It is commonly used in power management and switch applications, such as in the construction of utility power supplies and industrial power converters. Its main characteristics are high voltage and high current ratings, and it is suitable for use in high frequency switch-mode power supply guitar amplifiers, smart metering, telecommunication systems, and industrial applications.
A metal-oxide-semiconductor field-effect transistor (MOSFET) consists of a conducting channel of semiconductor material sandwiched between two metal gates. The electrical properties of the device can be altered by changing the voltage between the two metal gates, making the MOSFET ideal for switching applications. MOSFETs can be made of either p-type or n-type material and can be used to create logic gates, amplifiers, and switches.
The IXTU01N80 is a n-channel enhancement-mode MOSFET. It is designed to be used in a low-side switch configuration, meaning that it is connected to the ground, and its gate voltage is used to control its drain voltage. When the gate voltage is at a lower potential than its source voltage, the device is in its off state, and current will not flow through the drain. When the gate voltage is at a higher potential than its source voltage, the device is in its on state, and current will flow through the drain.
The IXTU01N80 has a maximum drain-source voltage of 100 volts, and a maximum drain current of 1.2 Amps. The device is rated for a continuous voltage and current and can handle higher frequencies than other power devices. The device is rated for a maximum switching frequency of 25 kHz, meaning it is capable of switching at speeds up to 25 thousand times per second, making it ideal for high frequency applications such as switch-mode power supplies, telecommunication systems, and industrial applications.
The IXTU01N80 has a on-resistance, or switching resistance, of 0.07 Ohms. This is the resistance that the device experiences when it is in its on-state. The lower the on-resistance, the lower the power loss in the device.
The IXTU01N80 has a maximum junction temperature of 150 degrees Celsius, which is its temperature limit when it is actively switched. It has a storage temperature of -55 to 125 degrees Celsius, meaning it should not be exposed to temperatures outside of this range.
In conclusion, the IXTU01N80 is a n-channel enhancement-mode MOSFET that is used in low-side switch configurations. It has a high current and voltage rating, and is suitable for use in high-frequency switch-mode power supplies, smart metering systems, telecom systems, and industrial applications. It has a low on-resistance, making it highly efficient for power management applications.
The specific data is subject to PDF, and the above content is for reference
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