IXTU55N075T

Series:	--
Packaging:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	75V
Current - Continuous Drain (Id) @ 25°C:	55A (Tc)
Rds On (Max) @ Id, Vgs:	--
Vgs(th) (Max) @ Id:	4V @ 25µA
FET Feature:	--
Power Dissipation (Max):	--
Operating Temperature:	--
Mounting Type:	Through Hole
Supplier Device Package:	TO-251
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA

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IXTU55N075T is a type of power field-effect transistor (FET) widely used in power conversion applications. It is a single enhancement-mode N-channel MOSFET. This device has an ON-resistance of 75mOhm and a maximum drain current of 55A, making it suitable for medium power applications. The IXTU55N075T is an enhancement-mode device featuring an N-channel, metal-oxide-semiconductor FET structure. It is considered to be one of the most efficient and reliable power-switching components available today. The gate and the drain regions are electrically connected by an oxide gate dielectric (water-blocking layer) that isolates the substrate from applied voltages and controls current conduction through the device. The function of the IXTU55N075T is to control the switching on and off of large amounts of power by changing the current flowing through its drain and gate regions. Its main application is in motor control and other harmonic-controlled circuits. Motor control circuits can use the IXTU55N075T as part of a pulse-width modulation (PWM) controller. This type of controller produces a series of electrical pulses of equal width and amplitude to control the speed of the motor, allowing precise and efficient control of the amount of power delivered to the motor. The IXTU55N075T also features an n-channel enhancement-mode. In this configuration, the on-resistance is increased when a voltage is applied to the gate. This is particularly useful for switchmode power supplies, DC motor control circuits, and other high frequency applications, as it allows for fast switching action and improved power conversion efficiency. The IXTU55N075T also features a maximum drain current rating of 55A, allowing it to be used in medium-power applications. It is also a cost-effective solution, particularly when compared to other FETs with similar ratings. This makes the IXTU55N075T an excellent choice for applications that require high-power switching in cost-sensitive applications. In conclusion, the IXTU55N075T is an excellent choice for power conversion, motor control, and other harmonic-controlled circuits. It features a 75mOhm ON-resistance, an n-channel enhancement-mode, and a maximum drain current of 55A, making it suitable for medium-power applications. This device also provides efficient and reliable switching, as well as improved power conversion efficiency.

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