Allicdata Part #: | IXTU12N06T-ND |
Manufacturer Part#: |
IXTU12N06T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 60V 12A TO-251 |
More Detail: | N-Channel 60V 12A (Tc) 33W (Tc) Through Hole TO-25... |
DataSheet: | IXTU12N06T Datasheet/PDF |
Quantity: | 66 |
Vgs(th) (Max) @ Id: | 4V @ 25µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | TO-251 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 33W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 256pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 3.4nC @ 10V |
Series: | TrenchMV™ |
Rds On (Max) @ Id, Vgs: | 85 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTU12N06T is a MOSFET that is used in a wide array of applications in various industries. It has characteristics that enable it to perform incredibly well in electronic circuits, such as excellent switching speed and low gate charge. It has a unique body style and is a single package, so it is easier to install and use in projects. This article will explore the IXTU12N06T’s various application fields, as well as its working principle.
Applications of IXTU12N06T
The IXTU12N06T is used in a wide variety of applications, including motor control, inverter circuits, and high-frequency switching. In motor control applications, the IXTU12N06T can be used to control the speed and torque of the motor. It is especially suited for this purpose due to its low gate charge and high switching frequency. In inverter circuits, the IXTU12N06T can be used to control the power flow. It has low turn-on resistance, which makes it suitable for this application. In addition, its low gate charge and high switching frequency make it ideal for high-frequency switching applications.
Working Principle of IXTU12N06T
The working principle of the IXTU12N06T is based on its structure and characteristics. This MOSFET is a voltage-controlled device, meaning that the voltage across the gate determines the current flow through the drain and source. The gate consists of an insulated gate surrounded by a gate region. As the voltage across the gate increases, a field-effect is created, which attracts the electrons and forms a conductive channel between the drain and the source. As the voltage across the gate increases, the current flow increases, and vice versa. This makes the IXTU12N06T an ideal device for controlling the flow of current in electronic circuits.
The IXTU12N06T also performs well in terms of power dissipation. It has a low on-state resistance, which increases the speed of switching and allows the device to dissipate a greater amount of power without causing damage to itself. The IXTU12N06T is also a linear device, meaning that the current flow is linearly proportional to the voltage across the gate. This makes it easy to control and use in applications that require precision and accuracy.
Conclusion
The IXTU12N06T is a versatile MOSFET that is used in a variety of applications, from motor control to high-frequency switching. It is a voltage-controlled device, with a low on-state resistance and high switching frequency. It is a linear device, allowing for precise current flow control. All of these features make the IXTU12N06T an attractive solution for applications that require reliable, high-performance switching.
The specific data is subject to PDF, and the above content is for reference
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