Allicdata Part #: | IXTU06N120P-ND |
Manufacturer Part#: |
IXTU06N120P |
Price: | $ 2.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1200V 0.6A TO-251 |
More Detail: | N-Channel 1200V 600mA (Tc) Through Hole TO-251 |
DataSheet: | IXTU06N120P Datasheet/PDF |
Quantity: | 1000 |
75 +: | $ 2.21701 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 1200V |
Current - Continuous Drain (Id) @ 25°C: | 600mA (Tc) |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-251 |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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Transistors are one of the most important components in the world of electronics. They are used in a wide range of applications from digital computing to telecommunication. In particular, FETs, or Field Effect Transistors, and MOSFETs, or Metal Oxide Semiconductor Field Effect Transistors, are two types of transistors that are widely used in both digital and analog circuits. The IXTU06N120P is a single FET and MOSFET that is commonly used for a variety of applications.
The IXTU06N120P is a dual-gate field effect transistor that is made with an N-channel and P-channel junction. Its field effect structure gives it the ability to provide high gain, high output impedance, and increased switching speed. It is also designed to provide improved surge protection, as well as superior noise immunity. In addition, the IXTU06N120P has a low power consumption and a high speed of operation.
The IXTU06N120P can be used in a variety of applications and is suitable for a wide range of uses. For example, it can be used in power converters and amplifiers. It can also be used in logic circuits and in the manufacture of switches and relays. The IXTU06N120P is also ideal for high-voltage analog and digital applications including high-speed digital-to-analog and analog-to-digital converters.
The working principle of the IXTU06N120P is based on the field effect structure, which consists of two layers of highly conducting material, commonly known as the bottom and top gates. The top gate is charged with a positive voltage and the bottom gate with a negative voltage. When a source or drain is connected between them, a channel will form. This channel is able to control the voltage across the device and is responsible for the output of the IXTU06N120P.
The IXTU06N120P is able to maintain a stable output, even if the voltage is changed rapidly. This helps to maintain the correct levels of current and voltage, even in applications where a large amount of power is being transferred. The IXTU06N120P is also able to maintain the same levels of performance over a wide temperature range, making it an ideal choice for many applications.
As well as being robust, the IXTU06N120P is also low cost and easy to install. It also requires minimal setup, as it does not require an external power supply. This makes it a great choice for applications which need to be deployed quickly and easily.
The IXTU06N120P is a great choice for many applications, from digital and analog circuits to power converters and high-speed logic circuits. Its robust construction, low cost, and high speed of operation make it an ideal choice for a wide range of applications. It is also easy to install and requires minimal setup, which makes it an ideal choice for applications that require rapid deployment.
The specific data is subject to PDF, and the above content is for reference
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