IXTU02N50D Allicdata Electronics
Allicdata Part #:

IXTU02N50D-ND

Manufacturer Part#:

IXTU02N50D

Price: $ 2.26
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 500V 0.2A TO-251
More Detail: N-Channel 500V 200mA (Tc) 1.1W (Ta), 25W (Tc) Thro...
DataSheet: IXTU02N50D datasheetIXTU02N50D Datasheet/PDF
Quantity: 1000
75 +: $ 2.03767
Stock 1000Can Ship Immediately
$ 2.26
Specifications
Vgs(th) (Max) @ Id: 5V @ 25µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
FET Feature: Depletion Mode
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V
Vgs (Max): ±20V
Series: --
Rds On (Max) @ Id, Vgs: 30 Ohm @ 50mA, 0V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTU02N50D is a type of insulated gate bipolar transistor (IGBT), which is a three-terminal electronic device that controls electrical current in between two conductors. This type of transistor was developed to bridge the gap between conventional MOSFETs and bipolar transistors, offering the benefits of both types of technology. It can be used in a wide range of applications, including motor control and lighting, as well as in communication systems.

The IXTU02N50D\'s structure is based on the structure of a MOSFET and a bipolar transistor, with the gate being insulated from the other two terminals. By controlling the voltage on the gate, a high or low conductive state can be achieved. The high-conductive state is achieved when the gate voltage is high and a forward bias is applied between the source and drain. This will cause the transistor to turn on and allow current to flow from the source to the drain. The low-conductive state is achieved by applying a reverse bias to the gate and will result in the transistor turning off and blocking the current flow.

The IXTU02N50D has a variety of applications, most notably in motor control, communications and lighting systems. In motor control, the IGBT can be used to convert a DC voltage to an AC voltage, enabling motors with varying speeds and directions. It can also be used in communications systems to switch signals on and off. In lighting systems, the IGBTs can be used to regulate power to LED lamps, allowing the user to adjust the intensity of the light. The IXTU02N50D is also found in switching power supplies and various other power control applications.

The IXTU02N50D has become increasingly popular in a variety of applications due to its low on-state resistance, low gate-to-drain charge, and low EMI radiation. It offers efficient power control, faster switching times, and higher reliability than other types of transistors. It is also capable of handling high current and voltage levels, making it a popular choice for power control applications. Additionally, the IXTU02N50D can be used in highly sensitive circuits, as its insulated gate keeps the gate-to-source voltage low.

The IXTU02N50D is a versatile transistor with a variety of applications. Its use in motor control, communications, and lighting systems make it a popular choice for a range of industries. The transistor\'s structure is based on the MOSFET and bipolar transistor, making it suitable for a variety of applications. The IXTU02N50D has low on-state resistance, low gate-to-drain charge, and low EMI radiation, giving it the added advantage of improved efficiency, faster switching times, and greater reliability.

The specific data is subject to PDF, and the above content is for reference

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