Allicdata Part #: | IXTU44N10T-ND |
Manufacturer Part#: |
IXTU44N10T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 100V 44A TO-251 |
More Detail: | N-Channel 100V 44A (Tc) Through Hole TO-251 |
DataSheet: | IXTU44N10T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 44A (Tc) |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | 4.5V @ 25µA |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-251 |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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The IXTU44N10T is a N-channel eFET (enhancement mode FET) FET device, specifically a MOSFET (Metal Oxide Semiconductor FET). The device is part of a family of FETs designed and manufactured by IXYS Corporation. It is designed for use in a wide range of applications, including power management, communications, and other digital and analog signals. It has a wide range of characteristics which make it suitable for a variety of applications, including high-efficiency operation, high current carrying, high speed switching and reliability.
The IXTU44N10T is a single device, consisting of a source, a gate, and a drain. The source is the terminal to which the electrical current enters the device. The gate is the terminal which controls the current flow between the source and the drain. The drain is the terminal from which the electrical current exits the device. The current flow between the source and the drain can be controlled via the gate voltage. When a voltage is applied to the gate, it creates an electric field which attracts electrons, thereby allowing the current to flow from the source to the drain. When the gate voltage is reduced, the current flow is blocked.
The basic operation of the IXTU44N10T is similar to other types of FETs, however there are some unique features that make this device particularly suitable for certain applications. In particular, the maximum current that can be carried by the device is higher than other types of FETs, making it well suited for power management in high power applications. In addition, the IXTU44N10T has a very low input capacitance which reduces the amount of time required for switching between low and high current flows, allowing for better operation in digital and high frequency applications.
The IXTU44N10T is also well suited for use in analog applications. The low input capacitance enables fast switching times, which makes it ideal for applications such as pulse width modulation, pulse code modulation, and other analog signal processing tasks. The device also has a low operating temperature range, which enables long life and improved reliability.
In summary, the IXTU44N10T is a single device FET designed for use in a wide range of applications. It has a wide range of characteristics that make it suitable for power management, communications, and other digital and analog signals. The device has a high current capacity and low input capacitance, enabling fast switching times. The device is well suited for use in both digital and analog applications, and has a low operating temperature range, allowing for improved reliability.
The specific data is subject to PDF, and the above content is for reference
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