
Allicdata Part #: | IXTU05N100-ND |
Manufacturer Part#: |
IXTU05N100 |
Price: | $ 1.81 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1000V 750MA TO-251 |
More Detail: | N-Channel 1000V 750mA (Tc) 40W (Tc) Through Hole T... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 1.81000 |
10 +: | $ 1.75570 |
100 +: | $ 1.71950 |
1000 +: | $ 1.68330 |
10000 +: | $ 1.62900 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | TO-251 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 260pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 7.8nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 17 Ohm @ 375mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 750mA (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTU05N100 is a N-channel Trench MOSFET transistor. It is a device that can be used for a variety of purposes, including in power circuits, and acts as a low-voltage switch or as a linear amplifier. It is also occasionally referred to as an IGFET or a Insulated Gate Field Effect Transistor. This type of transistor is becoming increasingly popular in modern electronic applications due to its ability to switch and amplify signals. The IXTU05N100 is a particularly useful MOSFET as it is a low-voltage model, meaning that it can be used for creating compact and efficient power circuits, even at sub-10V, making it an ideal choice for modern consumer electronics.
The IXTU05N100 is a great option for applications such as power supplies, motor controls and even lighting solutions. As it is a low-voltage MOSFET, it can be used to create efficient and compact solutions. It is rated for operation at voltages up to 100V and currents up to 5A, and has a low on-resistance of just 0.05Ω. This provides up to 25 Watts of power dissipation, making it suitable for many power supplies. The IXTU05N100 also benefits from having a wide temperature operating range, from -55⁰C to 150⁰C, meaning that it can be used in a variety of scenarios.
The IXTU05N100 operates using its “source-gate-drain” structure. This style of operation is commonly referred to as an “enhancement mode” device. This means that when a small control signal is applied to the gate, it can switch on and off the current from the source to the drain. This makes it a great choice for use in switching circuits as it is relatively straightforward to drive.
The IXTU05N100 also features a “body-diode”. The body-diode is an intrinsic feature of the FET device and allows current to flow between the source and the drain of the N-channel device in only one direction. This feature makes the MOSFET less prone to damage and ensures that it can be used in circuits with stronger voltage gradients.
In conclusion, the IXTU05N100 is an ideal choice for a range of applications. It is a low-voltage MOSFET which can be used in power supplies, motor controls and lighting solutions. It has a low on-resistance of 0.05Ω, providing up to 25 Watts of power dissipation, making it suitable for many power supplies. The IXTU05N100 also has a wide temperature operating range, from -55⁰C to 150⁰C, meaning that it can be used in a variety of scenarios.
The specific data is subject to PDF, and the above content is for reference
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