Allicdata Part #: | IXTU01N100D-ND |
Manufacturer Part#: |
IXTU01N100D |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1000V 0.1A TO-251 |
More Detail: | N-Channel 1000V 100mA (Tc) 1.1W (Ta), 25W (Tc) Thr... |
DataSheet: | IXTU01N100D Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 25µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | TO-251 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.1W (Ta), 25W (Tc) |
FET Feature: | Depletion Mode |
Input Capacitance (Ciss) (Max) @ Vds: | 120pF @ 25V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 80 Ohm @ 50mA, 0V |
Drive Voltage (Max Rds On, Min Rds On): | 0V |
Current - Continuous Drain (Id) @ 25°C: | 100mA (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXTU01N100D is an enhancement-mode N-channel power metal-oxide-semiconductor field-effect transistor (MOSFET) switching transistor that operates at a maximum drain-source voltage (Vds) of 100V. It is manufactured by IXYS Corporation and is part of their IXTU01N series.
This transistor has the advantages of providing a low drain-source on-resistance, low input and output capacitance, very low gate charge (Qg) and a low threshold voltage (Vth) in a single package.
The IXTU01N100D is designed for applications such as switch mode power supplies, DC-DC converters, motor control and solenoid drivers. Specifically, it offers high blocking voltage with low drain-source on-resistance, ideal for high current and high accuracy temperature monitoring.
This means that IXTU01N100D is ideal for any application where efficiency and performance are key. It is ideal for the power requirements of both power supply and appliance manufacturers.
In terms of working principle, IXTU01N100D is an enhancement-mode MOSFET, which is also known as an ion-sensitive field-effect transistor (ISFET). In a MOSFET, current can flow through the channel when a voltage is applied between the gate and the source.
When the voltage is greater than the threshold voltage (Vth) of the MOSFET, the channel becomes "conductive" and current can flow. As the voltage increases, the current also increases. This principle of operation is known as the "source-follower" configuration, where the gate voltage is equal to the source voltage minus the threshold voltage (Vgs = Vth).
IXTU01N100D has a very low on-resistance, making it highly efficient for high current applications. It also has a low input and output capacitance, which allows it to respond quickly to changes in voltage and quickly switch from one state to anther.
IXTU01N100D is highly reliable and robust. It has a very long operating life and is resistant to extreme temperatures and thermal cycling. These attributes make it ideal for high-reliability applications.
Overall, IXTU01N100D is a high-performance, yet cost-effective MOSFET that is suitable for a wide range of applications. It has a low on-resistance and low input/output capacitance, making it highly efficient and ideal for high current applications. It also has a long operating life and is resistant to extreme temperatures and thermal cycling, making it suitable for high-reliability applications.
The specific data is subject to PDF, and the above content is for reference
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