JAN2N7335

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The JAN2N7335 is a high-power N-channel enhancement-mode Field Effect Transistor (FET) array manufactured by ON Semiconductor. It features a four-pack of N-channel transistors - each having a Drain-Source voltage rating of 500 V and a Drain current rating of 5 A – integrated into a single package. This array is ideal for use in high-voltage and high-current applications.

The 2N7335 is part of the 2N6xxx family of FETs, which includes similar product offerings such as the 2N6373, 2N6388, and more. This array is built using the Supertex STR4015A-G15 process, which allows for high-voltage, high-current operation while still protecting against over-voltage conditions.

The working principle of the JAN2N7335 is based on the principle of field effect of a semiconductor. When a voltage is applied between the Gate and Source, an electric field is created which is used to modulate the conductivity of the channel between the Drain and Source. This is referred to as the channel of the FET. The voltage applied between the Gate and Source causes the channel to become either more or less conductive, allowing or preventing currents from flowing from the Drain to the Source.

The JAN2N7335 has wide range of applications. It can be used for switching and power regulation applications as well as in audio amplifiers, general purpose amplifiers, and power supplies among other common applications. It can also be used in high-voltage and high-current applications. Due to its high current and voltage ratings, the 2N7335 can be used in circuits requiring high voltages, such as automotive electrical systems, power circuits, and motor control.

The JAN2N7335 is a versatile, high-power FET array. Its wide range of applications and ability to handle high voltages and currents make it an ideal choice for high-power applications. Its reliable operation further ensures that it will continue to be a popular choice for automotive, industrial, and consumer electronics applications.

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