Allicdata Part #: | JS28F128P33BF70A-ND |
Manufacturer Part#: |
JS28F128P33BF70A |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 128M PARALLEL 56TSOP |
More Detail: | FLASH - NOR Memory IC 128Mb (8M x 16) Parallel 40M... |
DataSheet: | JS28F128P33BF70A Datasheet/PDF |
Quantity: | 1100 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 128Mb (8M x 16) |
Clock Frequency: | 40MHz |
Write Cycle Time - Word, Page: | 70ns |
Access Time: | 70ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.3 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP (14x20) |
Base Part Number: | JS28F128 |
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Memory. The JS28F128P33BF70A is a static random access memory (SRAM) chip that has a wide range of application fields and uses a unique working principle. It is a 128Mb flash memory device with 8Mb of SRAM. Its memory cells are arranged in 512K words of 32 bits with a clock cycle of 0.25 ns. The chip is manufactured using advanced CMOS semiconductor processes, and its storage capacity is larger than that of common non-volatile memories.
The Chip Verify, Prog Verify, Prog and Erase commands are used to program and erase the chip, allowing it to operate at a high temperature and improved performance with fast program/erase cycles. It also has a high endurance, allowing it to tolerate thousands of write/erase cycles. The JS28F128P33BF70A has a low power consumption, several operation modes, and two pairs of 5V I/O pads for power, reset, address and data.
The main applications of this chip include mobile phones, digital cameras, automotive, Bluetooth, USB/1394 controllers, printers, USB hubs, Wi-Fi/Ethernet routers, ASICs, FPGAs, graphic cards, medical, POS systems, and embedded systems. The chip has a high standby current of 0.2mA, making it suitable for battery applications. It also has a broad voltage supply range of 1.8V to 3.6V, making it fit for a wider range of applications. In addition, it has a high erase endurance up to 10000 cycles and programming speed between 30MHz and 60MHz.
In terms of the working principle, the JS28F128P33BF70A is a non-volatile memory device with a static RAM array. Its architecture is composed of a 128Mb flash memory array, controlling circuitry, and 8Mb of SRAM which are arranged in twelve sections. During operation, the SRAM array receives data from the flash memory, stores it there and passes the data on to the controlling circuitry. The controller stores the data received from the SRAM array and arranges it into a valid page of data. It then checks the page for errors, and if the page is found to be valid, it will erase the page and begin to reprogram the page with the new data.
The JS28F128P33BF70A chip is suitable for various applications due to its advanced technology, reliability, scalability and performance. It ensures higher temperature tolerance, low power consumption, fast operating speeds, and advanced programming and erase capabilities. Its small form factor makes it perfect for use in applications with limited space. Its wide supply voltage range makes it ideal for applications that require both low-voltage and high-voltage operations. Its wide temperature range makes it suitable for use in demanding environments that require higher temperatures. Its high endurance and high data retention make it ideal for applications that require storage of non-volatile data.
The specific data is subject to PDF, and the above content is for reference
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