Allicdata Part #: | MCH6320-TL-E-ND |
Manufacturer Part#: |
MCH6320-TL-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 12V 3.5A MCPH6 |
More Detail: | P-Channel 12V 3.5A (Ta) 1.5W (Ta) Surface Mount 6-... |
DataSheet: | MCH6320-TL-E Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 12V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 70 mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id: | 1.4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 5.6nC @ 4.5V |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 405pF @ 6V |
FET Feature: | -- |
Power Dissipation (Max): | 1.5W (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 6-MCPH |
Package / Case: | 6-SMD, Flat Leads |
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The MCH6320-TL-E, a x2 single-channel non-inverting high side switch MOSFET, is designed to provide a low on-resistance and a low turn-on voltage. It has applications in a variety of fields including power supply, motor control, and signal switching, and is an excellent choice for low power loss and efficiency in many industrial and automotive applications.
The MCH6320-TL-E features a chip-on-board design, which means the integrated circuit packaged in a plastic shell is soldered directly onto the substrates board using conductive paste. This ensures accurate component placement and allows for a better thermal performance since the chip is in direct contact with the heat sink of the board. This package type is also more space efficient, allowing for smaller devices.
In terms of working principle, the MCH6320-TL-E is a non-inverting high side switch MOSFET, which means it allows high level signals to pass through the device, providing a high output current. It contains a drain (the point where power is supplied) and a source (where power is discharged). The source connects to the load, while the drain connects to the power supply. When the input signal voltage is higher than the threshold voltage (VT) of the device, the MOSFET conducts and the current starts flowing from the source to the drain.
The triggering of the MCH6320-TL-E can be done either with a single or multiple pulse, making it suitable for pulse width modulation (PWM) applications. Its low on-state resistance is also beneficial in PWM applications as it limits power dissipation during switching. Furthermore, this device can also be triggered by an externally applied higher voltage, allowing flexibility in applications where a single voltage is not available.
In addition, the MCH6320-TL-E offers protection features such as an over-temperature shut off and reverse power protection. The over-temperature shut off is designed to prevent the device from overheating and potentially damaging the system if the operating temperature is too high. Reverse power protection is designed to prevent damage if the power supply is accidentally installed backwards.
Finally, the MCH6320-TL-E is designed to support multiple operating modes in order to meet various switching requirements. Some of these modes include standard on/off switching, dual device power control, PWM control, and gate pressure control.
In conclusion, the MCH6320-TL-E is an ideal choice for a wide range of applications where low power loss, efficiency, and accuracy are important. Due to its low on-resistance and turn-on voltage, its chip-on-board design, and the variety of protection and control features it offers, it provides an excellent solution for many industrial and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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