Allicdata Part #: | MCH6436-TL-E-ND |
Manufacturer Part#: |
MCH6436-TL-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 6A MCPH6 |
More Detail: | N-Channel 30V 6A (Ta) 1.5W (Ta) Surface Mount 6-MC... |
DataSheet: | MCH6436-TL-E Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 34 mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 7.5nC @ 4.5V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 710pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 1.5W (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 6-MCPH |
Package / Case: | 6-SMD, Flat Leads |
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The MCH6436-TL-E is a N-channel enhancement mode power field-effect transistor (FET). This device is a metal oxide semiconductor (MOS) FET, which borrows heavily from the metal-oxide-semiconductor insulated gate field-effect transistor (MOS-IGFET). It is a single-channel gate which is capable of providing high switching and current performance, making it ideal for power switching applications.
Application Field
The MCH6436-TL-E is designed primarily for use in power switching applications, although it is also suitable for a wide range of other applications including logic circuits. In power switching applications, it is used as a control element to switch power between two points in a circuit, either switching current on or off, depending on the logic level of the input. In logic circuits, it can be used to control inverter gates and other types of logic operations.
The MCH6436-TL-E offers very low on-resistance and is capable of operating at high frequencies. This makes it ideal for applications such as motor control, power inverters and converters, switch-mode power supplies and motor speed control. Its low on-resistance and high current carrying capability also make it suitable for current sensing and regulation in high-current applications.
Working Principle
The MCH6436-TL-E is a transistor which consists of a voltage source and a conductive channel between two source terminals. The source-drain channel is formed by a junction of two semi-conductors, typically made from silicon. By controlling the voltage at the gates, the current that flows from the source to the drain can be controlled. When the gate voltage is zero, the transistor is said to be off, and when it is positive, the transistor is said to be on, allowing current to flow through the device. The gate voltage, in turn, is controlled by an external signal or logic level.
This device is also capable of operating in linear mode, where the drain current is linear with the gate voltage. This mode of operation is used in applications such as audio amplifiers where a linear relationship between the signal and the output is desired. The linear operation of the MCH6436-TL-E is also beneficial in applications such as voltage regulation where a constant voltage is desired.
The MCH6436-TL-E is also capable of fast switching, allowing the device to respond quickly to changes in the gate voltage. This makes it suitable for use in high-frequency switching circuits, such as those found in power supplies, motor control and logic circuits.
The MCH6436-TL-E is a highly reliable FET and is suitable for use in a wide range of applications. It is capable of handling large amounts of current and providing high switching speeds, making it a suitable choice for both power switching and logic circuits.
The specific data is subject to PDF, and the above content is for reference
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