Allicdata Part #: | MCH6603-TL-H-ND |
Manufacturer Part#: |
MCH6603-TL-H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2P-CH 50V 0.14A MCPH6 |
More Detail: | Mosfet Array 2 P-Channel (Dual) 50V 140mA 800mW Su... |
DataSheet: | MCH6603-TL-H Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate, 1.5V Drive |
Drain to Source Voltage (Vdss): | 50V |
Current - Continuous Drain (Id) @ 25°C: | 140mA |
Rds On (Max) @ Id, Vgs: | 23 Ohm @ 40mA, 4V |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 1.4nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 7.4pF @ 10V |
Power - Max: | 800mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-SMD, Flat Leads |
Supplier Device Package: | 6-MCPH |
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MCH6603-TL-H is a transistor array manufactured by Microchip Technology, Inc. It is a series of 3-terminal N-channel enhancement-mode Field Effect Transistors (MOSFETs), designed to provide excellent performance even in the harshest industrial environments. The device is designed to provide excellent reliability and robustness, as well as superior switching performance, power consumption and thermal resistance. In addition, it has an enhanced EMI protection capability and a wide operating temperature range.
Application Field for MCH6603-TL-H
The MCH6603-TL-H is suitable for a wide range of uses, from high-speed switching applications to energy management, power conversion and motor control. It is capable of sensing low power signals and providing a precise, uniform output, making it ideal for a variety of applications, such as power supply sequencing, temperature control, and power monitoring. The device is well-suited for use in a variety of industrial, automotive, medical and consumer applications.
Working Principle of MCH6603-TL-H
The MCH6603-TL-H works by creating an electric field between the gate and source of the transistor, known as the “channel”. When an input voltage is applied to the gate, the electric field increases and draws in electron charge carriers from the source, which in turn forms a conducting “channel” between the source and the drain (the output terminal). When the input voltage exceeds the threshold voltage (Vt) of the transistor, the channel is formed and the output current at the drain increases.
The MCH6603-TL-H utilizes a variety of materials and construction techniques to ensure superior switching performance, power consumption and thermal resistance. The device features a low input capacitance, a low output resistance and a low power consumption. The MCH6603-TL-H also features integrated EMI protection, which ensures that the device can operate reliably in electrically noisy environments, such as those found in industrial applications. Furthermore, the device has an enhanced operating temperature range of –40°C to +85°C, ensuring reliable operation even in extreme temperatures.
The MCH6603-TL-H is a reliable and robust transistor array, capable of providing excellent performance in a wide range of applications. It has been designed to provide superior switching performance, power consumption and thermal resistance, as well as enhanced EMI protection, allowing the device to operate reliably in noisy environments. In addition, its wide operating temperature range ensures reliable operation even in extreme temperatures.
The specific data is subject to PDF, and the above content is for reference
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