MCH6444-TL-H Allicdata Electronics
Allicdata Part #:

MCH6444-TL-H-ND

Manufacturer Part#:

MCH6444-TL-H

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 35V 2.5A MCPH6
More Detail: N-Channel 35V 2.5A (Ta) 800mW (Ta) Surface Mount 6...
DataSheet: MCH6444-TL-H datasheetMCH6444-TL-H Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 35V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Rds On (Max) @ Id, Vgs: 98 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: --
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 186pF @ 20V
FET Feature: --
Power Dissipation (Max): 800mW (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-MCPH
Package / Case: 6-SMD, Flat Leads
Description

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MCH6444-TL-H is a high-performance N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) designed for use in high-power applications. This MOSFET provides low on-state resistance, high-frequency operation, and enhanced switching performance. It is especially suitable for switching circuits operating in the range of -55 C to 150 C. Thanks to its superior power handling capabilities, it is ideal for switching hard-switching, inductive loads such as Motor Control, Inductive Heating, Power Conversion and Switch Mode Power Supplies.

MCH6444-TL-H is a single channel enhancement mode MOSFET. It is constructed of a vertical single-drift DMOS (Depletion Mode Metal Oxide Semiconductor) and a P-well structure. The P-well structure provides the bulk of the current carrying capability and allows for high breakdown characteristics without compromising EMI. The DMOS structure provides low on-state resistance, fast switching speed and good high-temperature performance.

The working principle of MCH6444-TL-H is based on the transistor principle. When a small voltage is applied to the Gate of the transistor, a large current passes through the Drain and Source terminals. The transistor operates in the enhancement mode, meaning that it is normally Off and must be switched On by applying a Gate voltage. The amount of current that can pass through the device will depend on the Gate voltage and the amount of current that flows through the Drain and Source terminals will be proportional to the Gate voltage.

The MCH6444-TL-H is suitable for a wide range of applications including Motor Control, Inductive Heating, Power Conversion and Switch Mode Power Supplies. It is capable of operating at high input voltages up to 65V and can switch currents up to about 20A. The device is available in TO-220 or TO-263 packages and in various configurations. With its low on-state resistance and enhanced switching performance, MCH6444-TL-H makes an excellent choice for high power applications.

In conclusion, MCH6444-TL-H is a high performance and cost-effective N-channel MOSFET that is designed for high-power applications. It offers a low on-state resistance, fast switching speed and improved high-temperature performance when compared to other devices. It is suitable for various applications including Motor Control, Inductive Heating, Power Conversion and Switch Mode Power Supplies and is available in TO-220 or TO-263 packages. Its superior power handling capabilities make it an ideal choice for hard-switching, inductive loads.

The specific data is subject to PDF, and the above content is for reference

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