Allicdata Part #: | MJD112-1GOS-ND |
Manufacturer Part#: |
MJD112-1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN DARL 100V 2A IPAK |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 100V 2A ... |
DataSheet: | MJD112-1G Datasheet/PDF |
Quantity: | 2159 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 3V @ 40mA, 4A |
Current - Collector Cutoff (Max): | 20µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 1000 @ 2A, 3V |
Power - Max: | 1.75W |
Frequency - Transition: | 25MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Base Part Number: | MJD112 |
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MJD112-1G is a type of single bias, NPN Darlington transistor, robust and reliable, with excellent performance and a long life. The device, manufactured by Motorola, is widely used in various industrial and commercial applications.MJD112-1G offers excellent electrical characteristics and is often used in switched mode power supplies, motor speed control and voltage amplifiers, among other applications. The device operates within a voltage range of 250 Volts and a power output of 200W at 25C and 300W at 125C. It is available in a TO-3 package and has a maximum current gain of 7.2 at 1.0A collector current. The device also features a minimum hFE of 160 at 1.0A collector current.MJD112-1G is designed with a Darlington configuration featuring two NPN transistors in a single package. The two transistors are connected together in such a way that a small current passing through one creates a much greater current at the output. This provides a high current gain and high input resistance, making the device efficient and reliable.The MJD112-1G also features a high voltage breakdown, enabling it to withstand sustained high voltages. This makes the device suitable for use in high voltage applications such as voltage amplifiers. Additionally, the device also has an enhanced power dissipation capability, making it ideal for high current applications.The working principle of MJD112-1G is based on the base-emitter current (I-E) relationship of a transistor. When the device is in the \'on\' state, the current flow of the collector-emitter is dependent on the base-emitter current, which is determined by the amount of voltage at the base terminal. With the right amount of voltage, the MJD112-1G can produce a large current gain, allowing for efficient and reliable operation.The precise switching characteristics of the MJD112-1G make it a great choice for precise switching and fast switching applications. This also makes it an ideal choice for digital applications, especially those involving high speed digital data processing.In conclusion, the MJD112-1G is a robust and reliable NPN Darlington transistor, widely used in various industrial and commercial applications. The device offers excellent electrical characteristics and precise switching characteristics, making it an ideal choice for high-voltage, high-current and high-speed digital applications.
The specific data is subject to PDF, and the above content is for reference
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