MJD122T4G Allicdata Electronics
Allicdata Part #:

MJD122T4GOSTR-ND

Manufacturer Part#:

MJD122T4G

Price: $ 0.16
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN DARL 100V 8A DPAK
More Detail: Bipolar (BJT) Transistor NPN - Darlington 100V 8A ...
DataSheet: MJD122T4G datasheetMJD122T4G Datasheet/PDF
Quantity: 2500
2500 +: $ 0.14896
5000 +: $ 0.13869
12500 +: $ 0.13698
Stock 2500Can Ship Immediately
$ 0.16
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Power - Max: 1.75W
Frequency - Transition: 4MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Base Part Number: MJD122
Description

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The MJD122T4G is a PNP silicon power transistor that is used for a variety of applications. It is most commonly employed in switching, linear amplifier, and digital control circuits. It features high voltage, low power dissipation, and low drive current. The MJD122T4G is a single bipolar junction transistor (BJT) that is constructed from two single PNP transistors in an isolated package. This device is ideal for use in a variety of applications such as switching and linear amplifier circuits, and it is available in both through-hole and surface-mount packages.

The main advantages of this device include low power dissipation, high voltage, and low drive current. With its low power dissipation, the MJD122T4G can be used in a variety of applications. It is also more efficient than conventional transistors, which makes it an ideal choice for power sensitive applications. The device is capable of handling a wide range of frequencies, making it suitable for use in digital control circuits.

The MJD122T4G can be used in both AC and DC circuits. It is suitable for switching and linear amplifier applications, as well as digital control circuits. The device is suitable for use in a wide range of frequencies. It is also highly reliable, with an operating temperature range from -55°C to +150°C.

The working principle of the MJD122T4G is quite simple. It consists of two PNP transistors that are connected in series and driven by a single base current. When a base current is applied, the first transistor is switched on and current is generated through the collector-emitter junction of the second transistor. This current is then fed back to the base of the first transistor, which switches the second transistor on. This feedback circuit is used to maintain a constant output current.

The MJD122T4G can be used in a variety of applications, such as switching and linear amplifier circuits, as well as digital control circuits. It is well suited for high voltage, low power dissipation, and low drive current requirements. The device is highly reliable and has a wide range of operating temperatures, making it suitable for a variety of applications. With its simplicity and high performance, the MJD122T4G is an excellent choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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