Allicdata Part #: | 497-2469-2-ND |
Manufacturer Part#: |
MJD122T4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANS NPN DARL 100V 8A DPAK |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 100V 8A ... |
DataSheet: | MJD122T4 Datasheet/PDF |
Quantity: | 10000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 8A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 4V @ 80mA, 8A |
Current - Collector Cutoff (Max): | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 1000 @ 4A, 4V |
Power - Max: | 20W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Base Part Number: | MJD122 |
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The MJD122T4 is a discrete, low power, NPN, bipolar junction transistor (BJT). It is a general-purpose transistor with a variety of applications in the fields of electronics, power engineering and telecommunications.
The MJD122T4 is designed to handle a variety of roles, from signal amplification and switching in linear circuits, to level detection, motor control and conversion of logic levels. Its applications are wide-ranging and include audio and logic switching, signal conditioning and sense circuits, driving small motors and relays and AC or DC switching of low power loads, such as halogen lamps. In addition, the MJD122T4 is also used to make operational amplifiers, comparators, signal multipliers and signal conditioners.
A key feature of the MJD122T4 is its superior gain bandwidth performance. At a given collector current, the transistor can produce higher levels of gain than competing products. It also has a wide range of operating voltages and can operate over a wide temperature range. Finally, the MJD122T4 has low current consumption and reduced power dissipation in comparison to similar transistors.
The MJD122T4 is composed of two main components: the collector and the base. An NPN transistor typically has its negative terminal connected to the collector and its positive terminal connected to the base. When a current is applied to the base, it creates a magnetic field which collects electrons from the collector and transfers them to the base. This process is known as electron modulation and is at the heart of how BJTs work. The type of transistor used determines the magnitude of gain that can be achieved in this process.
The MJD122T4 is a general-purpose transistor with a collector emitter voltage (B-E) of 250V and a power dissipation of 1.2W. It has a current gain range (hfe) of 20-50mA and a maximum collector current of 0.3A. In addition, the device has an operating temperature range from -65 to +150°C.
The use of a MJD122T4 in an application depends upon the desired function. For example, in an audio amplifier circuit, the MJD122T4 is used to amplify an input signal to a level sufficient for driving a speaker. In a switching application, the transistor is used to control the flow of current by alternately turning the current on or off. It can also be used to detect logic levels or to drive motors and relays.
The MJD122T4 is a versatile device with a wide range of applications. It is a low power device with excellent gain bandwidth performance, wide temperature operating range and low current consumption. It is also suitable for a variety of roles in linear as well as switching applications, making it a popular choice for projects in electronics, power engineering and telecommunications.
The specific data is subject to PDF, and the above content is for reference
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