MJD112T4G Allicdata Electronics

MJD112T4G Discrete Semiconductor Products

Allicdata Part #:

MJD112T4GOSTR-ND

Manufacturer Part#:

MJD112T4G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN DARL 100V 2A DPAK
More Detail: Bipolar (BJT) Transistor NPN - Darlington 100V 2A ...
DataSheet: MJD112T4G datasheetMJD112T4G Datasheet/PDF
Quantity: 2500
Stock 2500Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Power - Max: 20W
Frequency - Transition: 25MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Base Part Number: MJD112
Description

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MJD112T4G is a type of bipolar junction transistor (BJT). A BJT is a three-terminal device comprised of two p-n junctions connected back-to-back within a single integrated circuit (IC). A BJT can function as an amplifier, switching device, voltage regulator, and other applications.

The MJD112T4G is an advanced, high-performance small-signal NPN single-transistor in a TO-227AA package. With a high early voltage of 12V and an operating current of up to 500mA, the MJD112T4G is suitable for use in a wide range of applications, ranging from electronic test equipment to communication systems. The rugged construction of the MJD112T4G makes it capable of withstanding high-voltage industrial environments, making it an ideal choice for power management applications.

The primary function of the MJD112T4G is to amplify weak signals. The transistor acts as an amplifier by increasing the current gain of the small input current and converting it into a larger output current. As a result, the output is increased from the input signal, allowing the signal to be sensed by other circuits.

The MJD112T4G can also be used as a switch. When the transistor is in the off state, it essentially acts as an open circuit, meaning no current can pass through it. However, when the transistor is switched on, the current can pass through, essentially creating a closed circuit. As a result, the signal can be switched on and off to control certain functions.

The MJD112T4G is also used in voltage regulation applications. The transistor acts as a voltage regulator by maintaining a constant voltage across its terminals, regardless of current variation. This ensures that any circuit that it is connected to is protected from dangerous electrical surges and drops.

MJD112T4G also finds use in communication systems. Since the transistor is capable of amplifying a weak signal, it can be used to increase the signal power of a communication system, allowing a signal to be heard over greater distances.

In summary, the MJD112T4G is an advanced, high-performance single transistor suitable for a wide range of applications, such as electronic test equipment, power management, switching, voltage regulation, and communication systems. With its rugged construction and high-performance characteristics, the MJD112T4G is an ideal choice for any application that requires a reliable and robust transistor.

The specific data is subject to PDF, and the above content is for reference

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