MJD117RLG

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP - Darlington
Current - Collector (Ic) (Max):	2A
Voltage - Collector Emitter Breakdown (Max):	100V
Vce Saturation (Max) @ Ib, Ic:	3V @ 40mA, 4A
Current - Collector Cutoff (Max):	20µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	1000 @ 2A, 3V
Power - Max:	1.75W
Frequency - Transition:	25MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Base Part Number:	MJD117

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MJD117RLG application field and working principle of single transistor bipolar junction transistors

Bipolar Junction Transistors (BJTs) are one of the most popular electronic components used in electronic circuit designs. The MJD117RLG is one of the most widely used single BJTs, which is used in a variety of applications, such as switching, amplifying and/or controlling electrical signals. A bipolar junction transistor (BJT) is a type of transistor that uses both majority and minority charge carriers. Bipolar transistors are widely used in electronic designs due to their low cost, small size, and low power consumption compared to other kinds of transistors. BJTs consist of three layers of semiconductor material connected together. The base of the transistor is made up of the N-type semiconductor material, the collector is composed of the P-type semiconductor material, and the emitter is made up of the N-type material.The external components associated with the MJD117RLG which are either coupled or connected directly to the transistor include the base, collector and emitter. The base lead is directly connected to the base of the transistor, the collector lead is connected to the collector of the transistor, and the emitter lead is connected to the emitter of the transistor.The interactive electrochemical behavior of the BJT can be characterized by understanding its I-V (current-voltage) characteristics. The I-V curve of the MJD117RLG can be divided into three separate regions - the Active region, the Saturation region, and the Cut-off region. When operating the transistor within the Active region, the collector current (Ic) is proportional to the base current (IB), with a gain factor known as the current gain (β). When the current flows through the collector-base junction, it causes a voltage drop between base and collector, which is known as the forward base-emitter voltage (VBEF). As long as the base current is greater than the reverse saturation current (IRS), the base-emitter region will remain “on”, allowing the collector current to flow with gain.In the Saturation region, the transistor is also said to be in its “on” state. However, the base-emitter region is saturated, meaning that the collector current (Ic) is limited only by the amount of current flowing through the base. As the base current increases, so does the collector current, with a maximum slope at the saturation region of the I-V curve.When the transistor is in the Cut-off region, the transistor is effectively “off” and no current can flow. This occurs when the base current (IB) is lower than the reverse saturation current (IRS) of the transistor. In other words, if the base current (IB) is lower than the reverse saturation current (IRS), then no collector current (Ic) will flow, and the transistor will remain off.MJD117RLG transistors are commonly used in a wide range of applications, including switching, amplifying and/or controlling electrical signals. It is widely used for high-frequency applications, such as the control of inductive loads, fast pulsing applications, switching and on/off operations, and DC-DC converters, among other applications. Additionally, it is used in low-frequency applications, such as the operation of bipolar circuits, voltage regulation, and active mode operation of digital circuits. In summary, the MJD117RLG is a single bipolar junction transistor that is used in a variety of applications, primarily for switching, amplifying, and/or controlling electrical signals. The I-V characteristics of the transistor is divided into three regions – the Active region, Saturation region, and Cut-off region – with the base lead being directly connected to the base of the transistor, the collector lead connected to the collector of the transistor, and the emitter lead being connected to the emitter of the transistor. Overall, the MJD117RLG is well suited for diverse applications that require high-frequency or low-frequency operations.

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