Allicdata Part #: | MJD127GOS-ND |
Manufacturer Part#: |
MJD127G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP DARL 100V 8A DPAK |
More Detail: | Bipolar (BJT) Transistor PNP - Darlington 100V 8A ... |
DataSheet: | MJD127G Datasheet/PDF |
Quantity: | 1037 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | PNP - Darlington |
Current - Collector (Ic) (Max): | 8A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 4V @ 80mA, 8A |
Current - Collector Cutoff (Max): | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 1000 @ 4A, 4V |
Power - Max: | 1.75W |
Frequency - Transition: | 4MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Base Part Number: | MJD127 |
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MJD127G is a NPN general-purpose Bipolar Junction Transistor (BJT) which is frequently used for small power amplifier circuits. It is often comparable or interchangeable with other similar versions such as 2N3904.
MJD127G has excellent gain and saturation voltage characteristics, making it suitable for applications in switching and amplifier circuits. The maximum voltage ratings of the device are 40V and the maximum collector current Ic is 600mA.
The basic working principle of the MJD127G is the same as that of other BJTs. It consists of an emitter (E), base (B), and collector (C) regions. The device functions based on the movement of electrons due to the creation of a potential barrier at the junction of the emitter and base regions. When a voltage is applied to the base terminal, it causes the current to flow, allowing the device to amplify the input signal.
The current gain of the device is calculated by the following equation:hFE = [IC / IB]. The typical current gain of the device ranges from 200 to 400.
MJD127G can be used for a variety of applications including power amplifiers, switching circuits, protection and level shifting circuits, and digital logic circuits. It is particularly useful for low-voltage, low-power applications due to its good gain performance. The devices can be used in audio, automotive, and industrial electronics.
MJD127G also offers good noise performance, making it a suitable choice for noise-sensitive applications such as audio applications and digital systems. The devices also have low power consumption and high power density, making them ideal for high-density circuits.
MJD127G is available in a variety of package types including TO-220, SMA, DPAK, and DPAK-X versions. The device is extremely low cost and widely available, making it a popular choice for many applications.
MJD127G is a useful general-purpose NPN BJT which offers good gain and saturation voltage characteristics, excellent noise performance, and low power consumption. It is suitable for a wide range of applications including power amplifiers, switching and protection circuits, audio applications, digital logic circuits, and more.
The specific data is subject to PDF, and the above content is for reference
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MJD112T4 | STMicroelect... | -- | 1000 | TRANS NPN DARL 100V 2A DP... |
MJD112-TP | Micro Commer... | 0.15 $ | 1000 | TRANS NPN 100V 2A DPAKBip... |
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MJD122-TP | Micro Commer... | 0.15 $ | 25000 | TRANS NPN 100V 8A DPAKBip... |
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MJD122TF | ON Semicondu... | -- | 18000 | TRANS NPN DARL 100V 8A DP... |
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