Allicdata Part #: | MJD122TFTR-ND |
Manufacturer Part#: |
MJD122TF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN DARL 100V 8A DPAK |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 100V 8A ... |
DataSheet: | MJD122TF Datasheet/PDF |
Quantity: | 18000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 8A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 4V @ 80mA, 8A |
Current - Collector Cutoff (Max): | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 1000 @ 4A, 4V |
Power - Max: | 1.75W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Base Part Number: | MJD122 |
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MJD122TF is a type of single bipolar junction transistor (BJT) developed to meet the demands for low power amplification, switching and satellite communications. It is used for a wide range of applications and is highly reliable and efficient. This article will discuss the application field for MJD122TF, as well as its working principle.
MJD122TF is a great choice for applications such as high-power DC/DC converters and motor controllers. It is designed to be used in an electrical system to switch current and voltage, and to amplify AC signals. It is a three-terminal device with two current-carrying terminals (collector and emitter) and one terminal (base) to control current flow. MJD122TF is designed with a fully optimized configuration, with high-frequency operation and heat dissipation capabilities. The device can handle greater than 10A collector current and 50V collector-emitter voltage.
One of the major advantages of MJD122TF is its low power dissipation, which makes them ideal for low-power electronics applications. It provides excellent performance in terms of breakdown voltage and thermal performance. This is due to its improved thermal stability, which allows for improved current conduction and greater reliability in power electronics.
MJD122TF is also suitable for a wide range of applications, such as switching, amplifying and regulating current or voltage in power supplies. It can be used in applications such as logic gates, rectifier circuits, automotive ignition systems and solar energy systems. It is also well-suited for use in audio amplifiers and radio receivers.
The working principle of MJD122TF is based on BJT technology. It is composed of two semiconductor layers, the emitter and the collector. A small current via the base terminal controls the amount of current flowing between the emitter and collector, thus controlling the output. Contrary to Field Effect Transistors (FETs), BJTs conduct current in both directions, allowing for both amplification and switching.
MJD122TF is also highly reliable, which is due to its long-term reliability and high thermal stability. The device is designed to have a long life span, so it can be used for high-power applications for extended periods of time. Its thermal stability is high enough to ensure it will not be affected by temperature changes or external heat sources. As such, it is a great choice for designers looking for a high-quality, reliable transistor.
In conclusion, MJD122TF is a type of single bipolar junction transistor designed for a wide range of applications. It is designed with a fully optimized configuration, with high-frequency operation and heat dissipation capabilities. The device is well-suited for use in high-power converters, motor controllers, audio amplifiers and radio receivers, as well as other power electronics applications. Its working principle is based on BJT technology, which allows for both amplification and switching. This is a great choice for designers looking for a reliable, high quality BJT.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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MJD112-TP | Micro Commer... | 0.15 $ | 1000 | TRANS NPN 100V 2A DPAKBip... |
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MJD117T4 | STMicroelect... | -- | 7500 | TRANS PNP DARL 100V 2A D-... |
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MJD122T4 | STMicroelect... | -- | 10000 | TRANS NPN DARL 100V 8A DP... |
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MJD122-TP | Micro Commer... | 0.15 $ | 25000 | TRANS NPN 100V 8A DPAKBip... |
MJD122T4G | ON Semicondu... | 0.16 $ | 2500 | TRANS NPN DARL 100V 8A DP... |
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MJD122TF | ON Semicondu... | -- | 18000 | TRANS NPN DARL 100V 8A DP... |
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MJD112G | ON Semicondu... | -- | 2002 | TRANS NPN DARL 100V 2A DP... |
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