Allicdata Part #: | MJD117-001-ND |
Manufacturer Part#: |
MJD117-001 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP DARL 100V 2A IPAK |
More Detail: | Bipolar (BJT) Transistor PNP - Darlington 100V 2A ... |
DataSheet: | MJD117-001 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP - Darlington |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 3V @ 40mA, 4A |
Current - Collector Cutoff (Max): | 20µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 1000 @ 2A, 3V |
Power - Max: | 1.75W |
Frequency - Transition: | 25MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Base Part Number: | MJD117 |
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The MJD117-001 bipolar junction transistor, designed and manufactured by Motorola, is a silicon-based device. It operates in the PNP mode, meaning that it draws current when a voltage is applied to the base of the transistor. The device features low power consumption, a high gain-bandwidth, and a wide range of operating frequencies. It is suitable for applications requiring linear amplification and low power consumption.
The MJD117-001 is designed to perform a wide range of both analog and digital functions. It has been used in a variety of applications, including amplification, switching, and power control. It is most commonly used in linear amplifiers,where it is used to amplify analog signals with minimal noise and distortion. The device can be used to perform myriad switching functions, including switching, on/off control, and pulse-width modulation (PWM) control. In power control applications, the device may be used to regulate a switched mode power supply.
The MJD117-001 device is a silicon-based bipolar junction transistor. As with all bipolar junction transistors, it consists of two p-and-n junctions, with the n-type collector region connected to the base region and the p-type emitter connected to the collector region. Bipolar junction transistors are current-controlled, meaning the current flow at the output is dependent on the current at the input. When a voltage is applied to the base terminal, a small current is able to flow from the collector region to the emitter region, allowing the transistor to amplify a signal. The gain of the device is determined by the ratio of output current to input current.
The MJD117-001 transistor has several key characteristics that make it suitable for a variety of applications. The device is able to operate over a wide range of temperatures, making it suitable for use in applications exposed to extreme conditions. The device features a low power consumption, allowing it to be used in battery-powered applications. Additionally, the device features a high gain-bandwidth, meaning it can amplify signals over a wide range of frequencies. Finally, the device has an excellent thermal stability, meaning it provides predictable performance even when subjected to extreme temperatures.
The MJD117-001 transistor is a versatile device that is well-suited to a variety of applications requiring linear amplification. Its low power consumption and wide operating frequencies make it suitable for power control applications as well. With its ability to handle extreme temperatures, it is also well-suited for applications exposed to extreme conditions. As such, it is a popular device for a variety of applications requiring a reliable and versatile bipolar junction transistor.
The specific data is subject to PDF, and the above content is for reference
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