MJD122-1 Allicdata Electronics
Allicdata Part #:

497-16183-ND

Manufacturer Part#:

MJD122-1

Price: $ 0.67
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANS NPN DARL 100V 8A TO251
More Detail: Bipolar (BJT) Transistor NPN - Darlington 100V 8A ...
DataSheet: MJD122-1 datasheetMJD122-1 Datasheet/PDF
Quantity: 20339
1 +: $ 0.59850
10 +: $ 0.52416
100 +: $ 0.40169
500 +: $ 0.31752
1000 +: $ 0.25402
Stock 20339Can Ship Immediately
$ 0.67
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Power - Max: 20W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251-3
Base Part Number: MJD122
Description

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MJD122-1 is a single-bipolar junction transistor (BJT). It is a discrete small signal transistor designed to be used in a variety of applications, including amplifiers and active filters. MJD122-1 provides excellent linearity and low noise performance, making it an ideal transistor for the demanding requirements of modern applications.

The MJD122-1 is a PNP transistor, meaning that the collector is connected to the most positive voltage node and the emitter is connected to the most negative voltage node. It uses a silicon semiconductor material as its active component, which is known for its stability, fast response time and low power consumption.

The MJD122-1 application field covers amplifying small signals of various kinds , including audio, digital and RF signals. This transistor is typically used as an amplifier in a circuit designed to detect, amplify and transmit signals across a wide range of frequencies. Additionally, the MJD122-1 can also be used to construct switching circuits and establish stable control current across a wide range of voltages.

MJD122-1 also features high-gain frequencies, meaning it can amplify many signals over a wide range of frequencies. This makes it ideal for a variety of applications, such as in receivers and transmitters, where it can provide reliable and consistent gain across a large range of frequencies. Another key feature of this transistor is its low noise performance, which ensures that it produces the desired signal without introducing unwanted noise. It also has quick recovery time and low quiescent current for improved power efficiency.

The basic principle behind the operation of the MJD122-1 transistor is grounded in the inherent principles of semiconductor operation. In a semiconductor, the amount of current that can flow through the transistor is controlled by the current that flows in from the base terminal. This is then amplified by the collector, allowing for the amplification of the input signal. The output current is then carried across the emitter terminal. The size of this current depends on the base current, the resistance of the circuit, and the gain (or amplification) of the transistor.

In summary, the MJD122-1 is an excellent single bipolar junction transistor designed to operate over a variety of frequencies. Its application focuses on the amplification of small signals for receivers or transmitters, or the control of current in switching circuits. Its linearity and low noise performance make it suitable for all kinds of applications, while its semiconductor material assures reliability and fast response time. Its high-gain capability, low noise performance and quick recovery time also makes it a great choice for modern applications.

The specific data is subject to PDF, and the above content is for reference

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